onsemi 將閘極驅動器與EliteSiC MOSFET搭配使用
電動車充電、能源儲存、不斷電系統 (UPS) 和太陽能等能源基礎設施應用正在將系統功率推至數百千瓦，甚至兆瓦等級。這些高功率應用採用半橋、全橋和三相拓撲，為逆變器和BLDC提供多達6個開關的工作週期。視功率等級和開關速度而定，系統設計人員需要包括矽、IGBT和SiC等各種不同的開關技術來滿足其應用要求。
在這些高功率應用當中，雖然IGBT的熱效能優於矽解決方案，但安森美 (onsemi) 的EliteSiC卻能實現更高的開關速度和高功率。安森美提供完整的SiC MOSFET產品組合，崩潰電壓介於650V至1700V，RDSON低至12mΩ。但是，每個SiC MOSFET都需要適用的閘極驅動器，才能達到最高的系統效率，同時將總功率損耗降到最低。下面這張易於使用的表格將適用的閘極驅動器與每個SiC MOSFET配對。
應用
- EV充電
- 能源儲存
- 不斷電系統 (UPS)
- 太陽能
方塊圖
影片
精選閘極驅動器
onsemi NCP51561 5kVRMS隔離式雙通道閘極驅動器
隔離式雙通道閘極驅動器分別提供4.5A/9A拉電流和灌電流。
onsemi NCD5700和NCD5701 IGBT閘極驅動器
高電流高效能IGBT閘極驅動器，適合高功率應用。
onsemi NCV5700 High-Current IGBT Gate Driver
Features a high-current output of +4/-6A at IGBT Miller Plateu Voltages.
onsemi NCV51563 Isolated Dual Channel Gate Driver
Supports 4.5A source & 9A sink peak current for fast switching power switches.
onsemi NCD57000和NCD57001高電流IGBT驅動器
具備內部電流隔離的單通道IGBT驅動器，非常適合用於高功率應用。
onsemi NCV57000 Isolated High Current IGBT Gate Driver
Designed for high system efficiency and reliability in high power applications.
onsemi NCD57001FDWR2G Isolated IGBT Gate Drivers
Single-channel IGBT driver with internal galvanic isolation designed for high system efficiency.
onsemi NCV57001 Isolated High Current IGBT Gate Drivers
Designed for high system efficiency and reliability in high power applications.
onsemi NCV57001F IGBT Gate Driver
Single-channel IGBT driver with internal galvanic isolation designed for high system efficiency.
onsemi NCD57090與NCV57090 IGBT/MOSFET閘極驅動器
高電流、單通道IGBT/MOSFET閘極驅動器，具有5kVrms內部電流隔離。
onsemi NCx575x0隔離式雙通道IGBT閘極驅動器
提供從輸入到每個輸出5kVRMS的內部電流隔離。
onsemi NCx57091 IGBT/MOSFET Gate Drivers
High-current single-channel drivers with 5kVRMS internal galvanic isolation.
onsemi NCD57100 Gate Drivers
High-current single-channel IGBT drivers featuring internal galvanic isolation.
onsemi NCP51560隔離式雙通道閘極驅動器
具有4.5A峰值源極電流和9A峰值灌極電流輸出能力。
onsemi NCP51563 Gate Drivers
Isolated drivers designed for fast switching to drive power MOSFETs and SiC MOSFET power switches.
onsemi NCV51561 Isolated Dual Channel Gate Driver
Features a 4.5A source and 9A sink peak current with short and matched propagation delays.
精選EliteSiC MOSFET
onsemi 650V Silicon Carbide (SiC) MOSFETs
Provides superior switching performance and higher reliability compared to Silicon.
onsemi 900V碳化矽(SiC) MOSFET
與矽裝置相比可提供出色的開關性能及更高的可靠性。
onsemi 1200V SiC MOSFET
與矽裝置相比可提供出色的開關性能及更高的可靠性。
onsemi 1200V EliteSiC (Silicon Carbide) N-Channel MOSFETs
1200V, 80mΩ, high-speed switching, AEC-Q101 automotive qualified, and come in TO247-3L package.
onsemi NTBG028N170M1 1700V 碳化矽 (SiC) MOSFET
針對快速切換應用進行了最佳化。
onsemi NTBG060N065SC1 44mohm Silicon Carbide MOSFET
Housed in a D2PAK-7L package and designed to be fast and rugged.
onsemi NVBG020N120SC1 N-Channel Silicon Carbide MOSFETs
Use a technology that provides superior switching performance and higher reliability.
onsemi NVBG080N120SC1 1200V SiC MOSFET
Features high efficiency, fast operation frequency, increased power density, and reduced EMI.
onsemi NVBG160N120SC1 160mΩ SiC MOSFET
Offers 1200VDSS, 160mΩ maximum RDS(on), 19.5A maximum ID, and is AEC-Q101 qualified.
onsemi NTBL045N065SC1 33mohm Silicon Carbide MOSFET
Housed in a TOLL NTBL045N065SC1 package and designed to be fast and rugged.
onsemi NTH4L025N065SC1 19mohm Silicon Carbide MOSFET
Housed in a TO-247-4L package and designed to be fast and rugged.
onsemi NTH4L028N170M1 1700V EliteSiC MOSFET
為能源和工業驅動應用提供可靠、高效率性能。
onsemi NTH4L060N065SC1 Silicon Carbide (SiC) MOSFET
Provides superior switching performance and higher reliability.
onsemi NTH4L075N065SC1 57mΩ碳化矽MOSFET
採用TO-247-4L封裝，以快速與堅固為其設計目的。
onsemi NTHL025N065SC1 Silicon Carbide (SiC) MOSFET
Provides superior switching performance and higher reliability.
onsemi NTHL060N065SC1 Silicon Carbide (SiC) MOSFET
Provides superior switching performance and higher reliability.
onsemi NTHL080N120SC1A N-Channel SiC MOSFET
Offers superior switching performance, high reliability, and low ON resistance.
onsemi NTHL015N065SC1 碳化矽MOSFET
12mohm，650V MOSFET，採用TO-247-3L封裝。
onsemi NVH4L015N065SC1 Silicon Carbide (SiC) MOSFETs
Provide superior switching performance and higher reliability than Silicon.
onsemi NVBG030N120M3S Silicon Carbide (SiC) MOSFET
AEC-Q101 qualified 1200V M3S planar EliteSiC MOSFET optimized for fast switching applications.
onsemi NVBG070N120M3S Silicon Carbide (SiC) MOSFET
1200V M3S planar EliteSiC MOSFET designed for fast switching applications.
