onsemi 650V Silicon Carbide (SiC) MOSFETs
onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.
Features
- Low RDS(on)
- High junction temperature
- Tj = 175°C
- 100% UIL tested
- RoHS compliant
- High-speed switching and low capacitance
- 650V rated
Applications
- DC-DC converter
- Boost inverter
Related Products
onsemi NVH4L015N065SC1 Silicon Carbide (SiC) MOSFETs
Provide superior switching performance and higher reliability than Silicon.
onsemi NTH4L075N065SC1 57mΩ碳化矽MOSFET
採用TO-247-4L封裝，以快速與堅固為其設計目的。
onsemi NTHL015N065SC1 碳化矽MOSFET
12mohm，650V MOSFET，採用TO-247-3L封裝。
onsemi NTH4L025N065SC1 19mohm Silicon Carbide MOSFET
Housed in a TO-247-4L package and designed to be fast and rugged.
onsemi NTBL045N065SC1 33mohm Silicon Carbide MOSFET
Housed in a TOLL NTBL045N065SC1 package and designed to be fast and rugged.
onsemi NTBG060N065SC1 44mohm Silicon Carbide MOSFET
Housed in a D2PAK-7L package and designed to be fast and rugged.
onsemi NTBG025N065SC1 19mohm Silicon Carbide MOSFET
Housed in a D2PAK-7L package and designed to be fast and rugged.
onsemi M2 EliteSiC MOSFETs
Feature voltage options of 650V, 750V, and 1200V.
onsemi NTBG023N065M3S 23mΩ EliteSiC MOSFET
Offers an M3S planar technology for fast-switching applications in a D2PAK-7L package.
onsemi NTBL023N065M3S Silicon Carbide (SiC) MOSFETs
Designed for demanding power applications.
Learn More About EliteSiC
Related Applications
onsemi 將閘極驅動器與EliteSiC MOSFET搭配使用
完整的閘極驅動器和EliteSiC MOSFET產品組合，搭配使用時可提高熱效能。