NTBG060N065SC1

onsemi
863-NTBG060N065SC1
NTBG060N065SC1

製造商：

說明：
碳化矽MOSFET SIC MOS D2PAK-7L 650V

規格書:
ECAD模型:
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庫存量: 312

庫存：
312 可立即送貨
工廠前置作業時間：
18 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$100.86 HK$100.86
HK$70.03 HK$700.30
HK$55.40 HK$5,540.00
HK$52.44 HK$26,220.00
完整捲（訂購多個800）
HK$52.44 HK$41,952.00

商品屬性 屬性值 選擇屬性
onsemi
產品類型: 碳化矽MOSFET
RoHS:  
REACH - SVHC:
SMD/SMT
D2PAK-7
N-Channel
1 Channel
650 V
46 A
70 mOhms
- 8 V, + 22 V
4.3 V
74 nC
- 55 C
+ 175 C
170 W
Enhancement
EliteSiC
品牌: onsemi
配置: Single
下降時間: 11 ns
互導 - 最小值: 12 S
封裝: Reel
封裝: Cut Tape
產品類型: SiC MOSFETS
上升時間: 14 ns
系列: NTBG060N065SC1
原廠包裝數量: 800
子類別: Transistors
技術: SiC
標準斷開延遲時間: 24 ns
標準開啟延遲時間: 11 ns
找到產品:
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至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

規格書

PCN

合規守則
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
原產地分類
原產國:
中國
封裝原產國:
中國
擴散國:
大韓民國
出貨時，國家可能會有所變更。

Heat Pumps

The heat pump stands as a cornerstone of the global shift towards secure and sustainable heating, harnessing low-emissions electricity to provide reliable warmth. While its primary function is heating, innovative reverse cycle models also offer cooling capabilities. Moreover, by efficiently recovering waste heat and elevating its temperature to practical levels, heat pumps hold immense potential for energy conservation. As businesses pivot towards a low-carbon future, there's a growing demand for more efficient power semiconductors. Balancing cost, footprint, and efficiency is paramount in this pursuit. onsemi Intelligent Power Modules (IPMs) emerge as a noteworthy solution within the heat pump market, offering compact design, high power density, and advanced control features.

NTBG060N065SC1 44mohm Silicon Carbide MOSFET

onsemi NTBG060N065SC1 44mohm Silicon Carbide MOSFET is housed in a D2PAK-7L package and designed to be fast and rugged. The onsemi NTBG060N065SC1 devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.

650V Silicon Carbide (SiC) MOSFETs

onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low RDS(on), and high short circuit withstand time (SCWT).

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