NTBL045N065SC1

onsemi
863-NTBL045N065SC1
NTBL045N065SC1

製造商:

說明:
碳化矽MOSFET SIC MOS TOLL 650V

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 1,374

庫存:
1,374 可立即送貨
工廠前置作業時間:
20 週 工廠預計生產時間數量大於所顯示的數量。
數量超過1374會受到最小訂單要求的限制。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$102.09 HK$102.09
HK$64.77 HK$647.70
HK$63.38 HK$6,338.00
HK$59.18 HK$59,180.00
完整捲(訂購多個2000)
HK$50.96 HK$101,920.00
4,000 報價

商品屬性 屬性值 選擇屬性
onsemi
產品類型: 碳化矽MOSFET
RoHS:  
REACH - SVHC:
SMD/SMT
PSOF-8
N-Channel
1 Channel
650 V
73 A
50 mOhms
- 8 V, + 22 V
4.3 V
105 nC
- 55 C
+ 175 C
348 W
Enhancement
EliteSiC
品牌: onsemi
配置: Single
下降時間: 7 ns
互導 - 最小值: 16 S
封裝: Reel
封裝: Cut Tape
產品類型: SiC MOSFETS
上升時間: 14 ns
系列: NTBL045N065SC1
原廠包裝數量: 2000
子類別: Transistors
技術: SiC
標準斷開延遲時間: 26 ns
標準開啟延遲時間: 13 ns
找到產品:
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所選屬性: 0

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low RDS(on), and high short circuit withstand time (SCWT).

650V Silicon Carbide (SiC) MOSFETs

onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

雲端電源管理解決方案

安森美 (onsemi) 雲端電源管理解決方案為基礎設施提供基礎運算及連接功能,對於處理器、記憶庫以及無線基地台的供電而言至關重要。隨著作業轉移至雲端,效率和可靠性的重要性日益提升。AI伺服器尤其需要可靠的電源以確保最佳效能和效率,因此對於AI驅動的作業而言,安森美解決方案對於保持其完整性和功能性極為關鍵。安森美提供各種AC/DC轉換、多相轉換、負載點電源和熱插拔保護解決方案,可滿足雲端基礎設施的不同電源需求。憑藉其尖端科技、可靠的性能以及深厚的應用專業知識,不論是對於現代的基地台、伺服器或資料中心,安森美都是能滿足供電需求的理想夥伴。

Heat Pumps

The heat pump stands as a cornerstone of the global shift towards secure and sustainable heating, harnessing low-emissions electricity to provide reliable warmth. While its primary function is heating, innovative reverse cycle models also offer cooling capabilities. Moreover, by efficiently recovering waste heat and elevating its temperature to practical levels, heat pumps hold immense potential for energy conservation. As businesses pivot towards a low-carbon future, there's a growing demand for more efficient power semiconductors. Balancing cost, footprint, and efficiency is paramount in this pursuit. onsemi Intelligent Power Modules (IPMs) emerge as a noteworthy solution within the heat pump market, offering compact design, high power density, and advanced control features.

NTBL045N065SC1 33mohm Silicon Carbide MOSFET

onsemi NTBL045N065SC1 33mohm Silicon Carbide MOSFET is housed in a TOLL NTBL045N065SC1 package and designed to be fast and rugged. The devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.