NTH4L025N065SC1

Name: onsemi NTH4L025N065SC1
Brand: onsemi
SKU: 863-NTH4L025N065SC1
Price: 155.36 HKD
Availability: InStock

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Mouser 編號：

863-NTH4L025N065SC1

製造商編號：

NTH4L025N065SC1

製造商：

onsemi

說明：

碳化矽MOSFET SIC MOS TO247-4L 650V

規格書:

NTH4L025N065SC1 規格書

ECAD模型:

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庫存量: 118

庫存：: 118 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 17 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$155.36	HK$155.36
	HK$115.74	HK$1,157.40
	HK$113.68	HK$11,368.00
	HK$111.22	HK$50,049.00

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商品屬性	屬性值	選擇屬性
製造商:	onsemi
產品類型:	碳化矽MOSFET
RoHS:
安裝風格:	Through Hole
封裝/外殼:	TO-247-4
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	650 V
Id - C連續漏極電流:	99 A
Rds On - 漏-源電阻:	28.5 mOhms
Vgs - 閘極-源極電壓:	- 8 V, + 22 V
Vgs th - 門源門限電壓 :	4.3 V
Qg - 閘極充電:	164 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	348 W
通道模式:	Enhancement
公司名稱:	EliteSiC
品牌:	onsemi
配置:	Single
下降時間:	8 ns
互導 - 最小值:	27 S
封裝:	Tube
產品類型:	SiC MOSFETS
上升時間:	19 ns
系列:	NTH4L025N065SC1
原廠包裝數量:	450
子類別:	Transistors
技術:	SiC
標準斷開延遲時間:	32 ns
標準開啟延遲時間:	17 ns

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所選屬性: 0

篩選文檔:

規格書

NTH4L025N065SC1 規格書

PCN

Product Change Notification (PDF)

Material Composition Disclosure

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NTH4L025N065SC1 19mohm Silicon Carbide MOSFET

onsemi NTH4L025N065SC1 19mohm Silicon Carbide MOSFET is housed in a TO-247-4L package and designed to be fast and rugged. The onsemi NTH4L025N065SC1 devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).

650V Silicon Carbide (SiC) MOSFETs

onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.