NTHL060N065SC1

onsemi
863-NTHL060N065SC1
NTHL060N065SC1

製造商：

說明：
碳化矽MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-3L

規格書:
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庫存量: 569

庫存：
569 可立即送貨
工廠前置作業時間：
17 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$77.60 HK$77.60
HK$52.61 HK$526.10
HK$46.77 HK$4,677.00
HK$46.69 HK$21,010.50
HK$44.96 HK$40,464.00
2,700 報價

商品屬性 屬性值 選擇屬性
onsemi
產品類型: 碳化矽MOSFET
RoHS:  
REACH - SVHC:
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
47 A
70 mOhms
- 8 V, + 22 V
4.3 V
74 nC
- 55 C
+ 175 C
176 W
Enhancement
EliteSiC
品牌: onsemi
配置: Single
下降時間: 8 ns
互導 - 最小值: 12 S
封裝: Tube
產品類型: SiC MOSFETS
上升時間: 32 ns
系列: NTHL060N065SC1
原廠包裝數量: 450
子類別: Transistors
技術: SiC
標準斷開延遲時間: 23 ns
標準開啟延遲時間: 12 ns
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所選屬性: 0

規格書

PCN

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low RDS(on), and high short circuit withstand time (SCWT).

650V Silicon Carbide (SiC) MOSFETs

onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

NTHL060N065SC1 Silicon Carbide (SiC) MOSFET

onsemi NTHL060N065SC1 Silicon Carbide (SiC) MOSFET provides superior switching performance and higher reliability. The MOSFET has low ON resistance and its compact chip size ensures low capacitance and gate charge. Consequently, system benefits include the highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

將閘極驅動器與EliteSiC MOSFET搭配使用

電動車充電、能源儲存、不斷電系統 (UPS) 和太陽能等能源基礎設施應用正在將系統功率推至數百千瓦，甚至兆瓦等級。這些高功率應用採用半橋、全橋和三相拓撲，為逆變器和BLDC提供多達6個開關的工作週期。視功率等級和開關速度而定，系統設計人員需要包括矽、IGBT和SiC等各種不同的開關技術來滿足其應用要求。

Heat Pumps

The heat pump stands as a cornerstone of the global shift towards secure and sustainable heating, harnessing low-emissions electricity to provide reliable warmth. While its primary function is heating, innovative reverse cycle models also offer cooling capabilities. Moreover, by efficiently recovering waste heat and elevating its temperature to practical levels, heat pumps hold immense potential for energy conservation. As businesses pivot towards a low-carbon future, there's a growing demand for more efficient power semiconductors. Balancing cost, footprint, and efficiency is paramount in this pursuit. onsemi Intelligent Power Modules (IPMs) emerge as a noteworthy solution within the heat pump market, offering compact design, high power density, and advanced control features.

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