新型電晶體

TDK-Lambda i1R ORing MOSFET Modules are High-efficiency and low-loss power devices designed to replace traditional diodes. These MOSFET modules utilize advanced MOSFET-based circuitry to minimize reverse-current transients and conduction losses, achieving up to 99.5% efficiency. The i1R ORing MOSFET modules address critical challenges in thermal management and power density, especially in high-current systems. These MOSFET modules provide a compact, shielded form factor that supports up to 80A output current with minimal derating, enabling reliable performance in space-constrained environments. The i1R MOSFET modules feature a wide input voltage range, fast turn-off during fault conditions, and industry-standard packaging. Typical applications include robotics, broadcast, battery-powered equipment, industrial, and COMM.
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TDK-Lambda i1R ORing MOSFET ModulesHigh-efficiency and low-loss power devices designed to replace traditional diodes.5/2/2026 -
IXYS X4-Class 功率MOSFETOffer low on-state resistance and conduction losses, with improved efficiency.2/2/2026 -
Qorvo QPD1014A GaN Input Matched Transistors15W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.20/1/2026 -
Qorvo QPD1011A GaN Input Matched Transistors7W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.19/1/2026 -
Qorvo QPD1004A GaN Input Matched Transistors25W, 50Ω input matched discrete GaN on SiC HEMT operates from 30MHz to 1400MHz on a 50V supply rail.19/1/2026 -
onsemi NVBYST0D6N08X 80V N-Channel Power MOSFETThis device offers a low QRR and soft recovery body diode in a TCPAK1012 (TopCool) package.26/12/2025 -
Infineon Technologies OptiMOS™ 6 80V Power MOSFETsSets industry benchmark performance with a wide portfolio offering.23/12/2025 -
onsemi NVMFD5877NL Dual N-Channel MOSFETDesigned for compact and efficient designs including high thermal performance.19/12/2025 -
Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETsEngineered to meet the stringent demands of electric vehicle (EV) applications.19/12/2025 -
onsemi NxT2023N065M3S EliteSiC MOSFETsFeature low effective output capacitance and ultra-low gate charge.4/12/2025 -
STMicroelectronics SGT080R70ILB E-Mode PowerGaN TransistorE-Mode PowerGaN transistor designed for high-efficiency power conversion applications.4/12/2025 -
Infineon Technologies 750V TRENCHSTOP™ IGBT7 H7 Discrete TransistorsDTO247 package, replaces multiple lower-current transistors in TO247 packages connected in parallel.1/12/2025 -
onsemi FDC642P-F085 Small Signal MOSFETOffers a high-performance trench technology for extremely low RDS(on) and fast switching speed.25/11/2025 -
onsemi NTTFS007P02P8 P-Channel Low/Medium Voltage MOSFETBuilt using PowerTrench technology for extremely low RDS(on) switching performance and ruggedness.25/11/2025 -
iDEAL Semiconductor iS20M028S1C SuperQ™ 200V N-Ch Power MOSFETsDesigned for SMPS and high-efficiency motor drives in a robust PDFN package measuring 5mm x 6mm.24/11/2025 -
onsemi NVD5867NL Single N-Channel Power MOSFETFeatures 60V drain-to-source voltage, 39mΩ drain-to-source on resistance, and AEC-Q101 qualified.20/11/2025 -
Central Semiconductor 1700V N溝道碳化矽 (SiC) MOSFETThese MOSFETS are designed for high-speed switching and fast reverse recovery applications.20/11/2025 -
onsemi NVD6824NL Single N-Channel MOSFETsOffer low RDS(on) to minimize conduction losses and high current capability.20/11/2025 -
onsemi AFGB30T65RQDN IGBTOffers a high figure of merit with low conduction and switching losses.19/11/2025 -
onsemi NVMFS5830NL Single N-Channel Power MOSFETHigh-efficiency single n-channel power MOSFET designed for demanding power management applications.19/11/2025 -
onsemi NVMFS5832NL Single N-Channel Power MOSFETHigh-performance MOSFET designed for low-voltage applications requiring efficient power switching.19/11/2025 -
STMicroelectronics SGT070R70HTO E-Mode PowerGaN TransistorBuilt on GaN technology and designed for demanding power conversion applications.7/11/2025 -
Comchip Technology AMMBT2907AM PNP Automotive Small Signal TransistorThe device has a -60V collector-base voltage rating & a -600mA collector current-continuous rating.31/10/2025 -
Comchip Technology AMMBT2222AM NPN Automotive Small Signal TransistorThe device has a 75V collector-base voltage rating and a 600mA collector current-continuous rating.31/10/2025 -
Diodes Incorporated 2N7002 N-Channel E-Mode Field Effect TransistorsOffers fast switching performance with low gate charge and 60V maximum drain-source voltage.31/10/2025 -
