IXYS HiPerFET™ Power MOSFETs
IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Features
- IXYS advanced low gate charge process
- International standard packages
- Low gate charge and capacitance
- Low RDS(on)
- Unclamped Inductive Switching (UIS) rated
- Molding epoxies meet UL94V-0 flammability classification
Associated Products
IXYS X3-Class HiPerFET™ Power MOSFETs
N-channel, enhancement mode, avalanche-rated MOSFETs.
IXYS HiPerFET and MOSFET Power Devices
Available in the SMPD package, which is much lighter than comparable conventional power modules.
IXYS Standard N-Channel HiPerFET™ Power MOSFETs
For both hard switching & resonant mode applications with low gate charge & excellent ruggedness.
IXYS Q-Class HiPerFET™ Power MOSFETs
For both hard switching & resonant mode applications with low gate charge & excellent ruggedness.
IXYS Q3-Class HiperFET™ Power MOSFETs
A broad range of devices that demonstrate exceptional power-switching performance.
IXYS Gen2 Trench Gate Power MOSFETs
Offered with drain-to-source voltage ratings from 40V to 170V and high current of up to 600A.
IXYS 60V TrenchT3 HiPerFET Power MOSFETs
Ultra low on-resistance, rugged devices designed for industrial power conversion applications.
IXYS 40V TrenchT4 Power MOSFETs
Easy-to-mount N-Channel enhancement MOSFETs housed in international standard packages.
IXYS X-Class Power MOSFETs
Easy-to-mount high-power density N-Channel Enhancement Mode MOSFETs with a low RDS(ON) and QG.
IXYS X2-Class Power MOSFETs with HiPerFET™
For high-efficiency, high speed power switching applications with low gate charge.
IXYS X3-Class HiPerFET™功率MOSFET
具備N通道強化模式的突崩等級快速固有二極體。
IXYS X4-Class 135V-200V Power MOSFETs
Power MOSFETs that come with significantly reduced resistance RDS(on) and gate charge Qg.
IXYS IXT 200V X4 Ultra Junction Power MOSFETs
N-channel devices with either 10.6mΩ, 13mΩ, or 21mΩ RDS(on) and a 200V maximum drain-source voltage.