X4-Class 135V-200V Power MOSFETs

IXYS X4-Class 135V-200V Power MOSFETs are developed using a charge compensation principle and proprietary process technology. This technology results in Power MOSFETs with significantly reduced resistance R_DS(on) and gate charge Q_g. A low on-state resistance reduces the conduction losses and lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads and lowers gate drive requirements. These MOSFETs are also avalanche-rated and exhibit a superior dv/dt performance. Due to its positive temperature coefficient of on-state resistance, these MOSFETs can be operated in parallel to meet higher current requirements.