IXTP170N13X4

IXYS
747-IXTP170N13X4
IXTP170N13X4

製造商：

說明：
MOSFET IXTP170N13X4

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庫存：
暫無庫存
工廠前置作業時間：
27 週 工廠預計生產時間。
此產品已報告長備貨期。
最少： 300   多個： 50
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
HK$77.19 HK$23,157.00
HK$73.08 HK$36,540.00

商品屬性 屬性值 選擇屬性
IXYS
產品類型: MOSFET
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
135 V
170 A
6.3 mOhms
- 20 V, 20 V
2.5 V
105 nC
- 55 C
+ 175 C
480 W
Enhancement
HiPerFET
Tube
品牌: IXYS
配置: Single
下降時間: 7 ns
互導 - 最小值: 70 S
產品類型: MOSFETs
上升時間: 8 ns
系列: X4-Class
原廠包裝數量: 50
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 46 ns
標準開啟延遲時間: 26 ns
每件重量: 2 g
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所選屬性: 0

規格書

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CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

電動車輛充電解決方案

Littelfuse電動車輛(EV)充電解決方案允許設計人員選擇理想解決方案以確保EV充電單元的功能和安全。非車載EV充電解決站可在極熱、極冷、雨、雪和雷暴天氣的惡劣環境中使用。Littelfuse產品可防護這些危險，盡量減低故障風險。

X4-Class 135V-200V Power MOSFETs

IXYS X4-Class 135V-200V Power MOSFETs are developed using a charge compensation principle and proprietary process technology. This technology results in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses and lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads and lowers gate drive requirements. These MOSFETs are also avalanche-rated and exhibit a superior dv/dt performance. Due to its positive temperature coefficient of on-state resistance, these MOSFETs can be operated in parallel to meet higher current requirements.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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