IXT 200V X4 Ultra Junction Power MOSFETs

IXYS IXT 200V X4 Ultra Junction Power MOSFETs are N-channel enhancement-mode devices with either 10.6mΩ, 13mΩ, or 21mΩ RDS(on) and a 200V maximum drain-source voltage. The IXT MOSFETs are available in TO-220, TO-247, TO-263, or TO-268 standard package style that is avalanche-rated with high-power density. The IXYS IXT 200V X4 Ultra Junction Power MOSFETs are ideal for use in switch-mode and resonant-mode power supplies.

結果: 9
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
IXYS MOSFET TO263 200V 86A N-CH X4CLASS 2,004庫存量
HK$130.62
HK$75.46
HK$72.42
最少: 1
倍數: 1
Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 86 A 13 mOhms 20 V 4.5 V 70 nC - 55 C + 175 C 300 W Enhancement Tube
IXYS MOSFET 200V, 60A current capacity, Ultra junction X4, TO-220 package, MOSFET 268庫存量
HK$110.15
HK$62.55
HK$58.03
最少: 1
倍數: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 60 A 21 mOhms 20 V 4.5 V 11 nC - 55 C + 175 C 250 W Enhancement X4-Class Tube
IXYS MOSFET 200V, 60A current capacity, Ultra junction X4, TO-263 package, MOSFET 499庫存量
HK$116.31
HK$66.42
HK$62.31
最少: 1
倍數: 1
Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 60 A 21 mOhms 20 V 4.5 V 11 nC - 55 C + 175 C 250 W Enhancement X4-Class Tube
IXYS MOSFET 200V, 60A current capacity, Ultra junction X4, TO-247 package, MOSFET 329庫存量
HK$127.90
HK$72.25
HK$70.45
最少: 1
倍數: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 60 A 21 mOhms 20 V 4.5 V 11 nC - 55 C + 175 C 250 W Enhancement X4-Class Tube
IXYS MOSFET TO220 200V 94A N-CH X4CLASS 719庫存量
HK$143.77
HK$96.91
HK$81.38
HK$78.42
最少: 1
倍數: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 94 A 10.6 mOhms 20 V 4.5 V 77 nC - 55 C + 175 C 360 W Enhancement Tube
IXYS MOSFET TO247 200V 220A N-CH X4CLASS 1,166庫存量
HK$201.06
HK$118.45
HK$117.05
最少: 1
倍數: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 220 A 5.5 mOhms 20 V 4.5 V 157 nC - 55 C + 175 C 800 W Enhancement Tube
IXYS MOSFET TO263 200V 94A N-CH X4CLASS
620預期7/6/2027
HK$145.91
HK$96.67
HK$79.57
最少: 1
倍數: 1
Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 94 A 10.6 mOhms 20 V 4.5 V 77 nC - 55 C + 175 C 360 W Enhancement Tube
IXYS MOSFET TO247 200V 94A N-CH X4CLASS 無庫存前置作業時間 30 週
HK$141.96
HK$108.09
HK$90.01
HK$76.04
最少: 1
倍數: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 94 A 10.6 mOhms 20 V 4.5 V 77 nC - 55 C + 175 C 360 W Enhancement Tube
IXYS MOSFET TO220 200V 86A N-CH X4CLASS 無庫存前置作業時間 36 週
HK$137.69
HK$79.98
HK$74.39
最少: 1
倍數: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 86 A 13 mOhms 20 V 4.5 V 70 nC - 55 C + 175 C 300 W Enhancement Tube