HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

結果: 720
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 資格 公司名稱 封裝
IXYS MOSFET 10 Amps 800V 1.1 Rds 8,959庫存量
最少: 1
倍數: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 10 A 1.1 Ohms - 30 V, 30 V 3 V 40 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube
IXYS MOSFET 250V UltraJunc X3 Pwr MOSFET 805庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 250 V 240 A 4.1 mOhms - 20 V, 20 V 2.5 V 345 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 1,148庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 64 A 96 mOhms - 30 V, 30 V 5 V 200 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube

IXYS MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 400A 3,347庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 75 V 400 A 2.3 mOhms - 20 V, 20 V 4 V 420 nC - 55 C + 175 C 1 kW Enhancement HiPerFET Tube
IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 1,540庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 150 A 19 mOhms - 20 V, 20 V 3 V 197 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFET TO220 200V 72A N-CH X3CLASS 3,528庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 72 A 20 mOhms - 20 V, 20 V 2.5 V 55 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFET 230A 200V 903庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 230 A 7.5 mOhms - 20 V, 20 V 5 V 358 nC - 55 C + 175 C 1.67 kW Enhancement HiPerFET Tube
IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/44A 66庫存量
最少: 1
倍數: 1

Si Through Hole PLUS-264-3 N-Channel 1 Channel 1 kV 44 A 220 mOhms - 30 V, 30 V 3.5 V 264 nC - 55 C + 150 C 1.56 kW Enhancement HiPerFET Tube
IXYS MOSFET TO247 650V 24A N-CH X2CLASS 586庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 145 mOhms - 30 V, 30 V 3 V - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFET 360Amps 55V 428庫存量
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 55 V 360 A 2.4 mOhms - 20 V, 20 V 2 V 330 nC - 55 C + 175 C 935 W Enhancement HiPerFET Tube
IXYS MOSFET 100 Amps 500V 0.05 Ohms Rds 467庫存量
最少: 1
倍數: 1

Si Through Hole PLUS-264-3 N-Channel 1 Channel 500 V 100 A 49 mOhms - 30 V, 30 V 5 V 240 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFET TrenchT2 HiperFETs Power MOSFET 134庫存量
300預期21/10/2026
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 75 V 400 A 2.3 mOhms - 20 V, 20 V 2 V 420 nC - 55 C + 175 C 1 mW Enhancement HiPerFET Tube
IXYS MOSFET 1000V 32A TO-264 Power MOSFET 194庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 32 A 220 mOhms - 30 V, 30 V 3.5 V 130 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET 186庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 40 V 600 A 1.5 mOhms - 20 V, 20 V 1.5 V 590 nC - 55 C + 175 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFET Trench HiperFET Power MOSFET 169庫存量
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 94 A 36 mOhms HiPerFET Tube
IXYS MOSFET PolarP2 Power MOSFET 280庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 94 A 55 mOhms - 30 V, 30 V 3 V 228 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 650V/34A Ultra Junction X2 660庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 34 A 105 mOhms - 30 V, 30 V 2.7 V 56 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube

IXYS MOSFET PolarP2 Power MOSFET 928庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 52 A 120 mOhms - 30 V, 30 V 4.5 V 113 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube
IXYS MOSFET Polar Power MOSFET HiPerFET 88庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 100 V 250 A 6.5 mOhms - 20 V, 20 V 5 V 205 nC - 55 C + 175 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET 169庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 360 A 4 mOhms - 20 V, 20 V 2.5 V 715 nC - 55 C + 175 C 1.67 mW Enhancement HiPerFET Tube
IXYS MOSFET TO220 300V 56A N-CH X3CLASS 487庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 56 A 27 mOhms - 20 V, 20 V 2.5 V 56 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFET 500V 36A 1,649庫存量
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 500 V 36 A 170 mOhms - 30 V, 30 V 5 V 93 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube

IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 646庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 150 A 19 mOhms - 20 V, 20 V 3 V 197 nC - 55 C + 150 C 1.3 mW Enhancement HiPerFET Tube

IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 500V/80A 710庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 80 A 65 mOhms - 30 V, 30 V 6.5 V 200 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube

IXYS MOSFET 600V 80A 0.07Ohm PolarP3 Power MOSFET 245庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 80 A 70 mOhms - 30 V, 30 V 5 V 190 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube