|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
- SCT019HU120G3AG
- STMicroelectronics
-
1:
HK$181.83
-
12庫存量
-
600預期2/4/2027
-
新產品
|
Mouser 元件編號
511-SCT019HU120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
|
|
12庫存量
600預期2/4/2027
|
|
|
HK$181.83
|
|
|
HK$135.79
|
|
|
HK$104.31
|
|
|
HK$103.82
|
|
最少: 1
倍數: 1
:
600
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q100
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
- SCTW40N120G2VAG
- STMicroelectronics
-
1:
HK$158.73
-
551庫存量
|
Mouser 元件編號
511-SCTW40N120G2VAG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
|
|
551庫存量
|
|
|
HK$158.73
|
|
|
HK$102.67
|
|
|
HK$87.71
|
|
|
HK$87.54
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL90N65G2V
- STMicroelectronics
-
1:
HK$256.46
-
1,597庫存量
|
Mouser 元件編號
511-SCTL90N65G2V
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
1,597庫存量
|
|
|
HK$256.46
|
|
|
HK$187.50
|
|
|
HK$183.22
|
|
|
HK$182.81
|
|
|
HK$171.39
|
|
|
HK$171.22
|
|
最少: 1
倍數: 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
18 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 175 C
|
935 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL35N65G2V
- STMicroelectronics
-
1:
HK$140.97
-
2,311庫存量
|
Mouser 元件編號
511-SCTL35N65G2V
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
2,311庫存量
|
|
|
HK$140.97
|
|
|
HK$99.63
|
|
|
HK$85.49
|
|
|
HK$85.41
|
|
|
HK$79.90
|
|
|
HK$79.90
|
|
最少: 1
倍數: 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
67 mOhms
|
- 10 V, + 22 V
|
5 V
|
73 nC
|
- 55 C
|
+ 175 C
|
417 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
- SCT012W90G3-4AG
- STMicroelectronics
-
1:
HK$182.48
-
632庫存量
-
新產品
|
Mouser 元件編號
511-SCT012W90G3-4AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
|
|
632庫存量
|
|
|
HK$182.48
|
|
|
HK$115.00
|
|
|
報價
|
|
|
報價
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
15.8 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
138 nC
|
- 55 C
|
+ 200 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
- SCT016H120G3AG
- STMicroelectronics
-
1:
HK$205.25
-
491庫存量
-
新產品
|
Mouser 元件編號
511-SCT016H120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
|
|
491庫存量
|
|
|
HK$205.25
|
|
|
HK$148.37
|
|
|
HK$146.15
|
|
|
HK$141.14
|
|
|
HK$129.30
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
112 A
|
22 mOhms
|
- 10 V, + 22 V
|
3 V
|
150 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
- SCT020HU120G3AG
- STMicroelectronics
-
1:
HK$187.09
-
254庫存量
-
600預期25/9/2026
-
新產品
|
Mouser 元件編號
511-SCT020HU120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
|
|
254庫存量
600預期25/9/2026
|
|
|
HK$187.09
|
|
|
HK$139.74
|
|
|
HK$120.83
|
|
|
HK$106.94
|
|
最少: 1
倍數: 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
|
555 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
HK$111.87
-
943庫存量
-
新產品
|
Mouser 元件編號
511-SCT027H65G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
943庫存量
|
|
|
HK$111.87
|
|
|
HK$78.09
|
|
|
HK$63.46
|
|
|
HK$59.27
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
39.3 mOhms
|
- 10 V, + 22 V
|
3 V
|
48.6 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT055TO65G3
- STMicroelectronics
-
1:
HK$75.21
-
1,754庫存量
-
新產品
|
Mouser 元件編號
511-SCT055TO65G3
新產品
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
|
|
1,754庫存量
|
|
|
HK$75.21
|
|
|
HK$51.38
|
|
|
HK$42.42
|
|
|
HK$38.55
|
|
|
HK$35.26
|
|
|
HK$35.26
|
|
最少: 1
倍數: 1
:
1,800
|
|
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
3 V
|
31 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
HK$157.99
-
465庫存量
|
Mouser 元件編號
511-SCT018W65G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
465庫存量
|
|
|
HK$157.99
|
|
|
HK$116.40
|
|
|
HK$89.02
|
|
|
HK$77.35
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
77 nC
|
- 55 C
|
+ 200 C
|
398 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
HK$166.29
-
362庫存量
|
Mouser 元件編號
511-SCT020W120G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
362庫存量
|
|
|
HK$166.29
|
|
|
HK$103.98
|
|
|
HK$98.89
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
Hip247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
+ 200 C
|
541 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
HK$167.36
-
305庫存量
-
1,200預期31/8/2026
|
Mouser 元件編號
511-SCT025W120G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
305庫存量
1,200預期31/8/2026
|
|
|
HK$167.36
|
|
|
HK$119.68
|
|
|
HK$103.16
|
|
|
HK$91.57
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
HK$155.77
-
424庫存量
|
Mouser 元件編號
511-SCT025W120G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
424庫存量
|
|
|
HK$155.77
|
|
|
HK$96.91
|
|
|
HK$90.91
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
HK$127.82
-
261庫存量
|
Mouser 元件編號
511-SCT027W65G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
261庫存量
|
|
|
HK$127.82
|
|
|
HK$95.43
|
|
|
HK$72.17
|
|
|
HK$60.66
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
29 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
51 nC
|
- 55 C
|
+ 200 C
|
313 W
|
Enhancement
|
AEC-Q100
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
HK$115.66
-
377庫存量
|
Mouser 元件編號
511-SCT040W120G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
377庫存量
|
|
|
HK$115.66
|
|
|
HK$80.88
|
|
|
HK$61.81
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q100
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
HK$114.18
-
505庫存量
|
Mouser 元件編號
511-SCT040W120G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
505庫存量
|
|
|
HK$114.18
|
|
|
HK$80.23
|
|
|
HK$61.24
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
HK$94.94
-
527庫存量
|
Mouser 元件編號
511-SCT040W65G3-4
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
527庫存量
|
|
|
HK$94.94
|
|
|
HK$56.96
|
|
|
HK$50.80
|
|
|
HK$48.25
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
HK$110.31
-
481庫存量
|
Mouser 元件編號
511-SCT040W65G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
481庫存量
|
|
|
HK$110.31
|
|
|
HK$79.98
|
|
|
HK$68.39
|
|
|
HK$58.20
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055HU65G3AG
- STMicroelectronics
-
1:
HK$111.22
-
1,080庫存量
|
Mouser 元件編號
511-SCT055HU65G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
1,080庫存量
|
|
|
HK$111.22
|
|
|
HK$84.75
|
|
|
HK$70.61
|
|
|
HK$61.65
|
|
|
HK$58.77
|
|
最少: 1
倍數: 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
29 nC
|
- 55 C
|
+ 175 C
|
185 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
HK$111.13
-
301庫存量
-
1,200預期10/8/2026
|
Mouser 元件編號
511-SCT070W120G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
301庫存量
1,200預期10/8/2026
|
|
|
HK$111.13
|
|
|
HK$89.52
|
|
|
HK$70.28
|
|
|
HK$58.77
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
41 nC
|
- 55 C
|
+ 200 C
|
236 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
HK$180.92
-
49庫存量
-
1,000預期17/8/2026
|
Mouser 元件編號
511-SCT012H90G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
49庫存量
1,000預期17/8/2026
|
|
|
HK$180.92
|
|
|
HK$129.79
|
|
|
HK$117.87
|
|
|
HK$117.79
|
|
|
HK$110.15
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
12 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
138 nC
|
- 55 C
|
+ 175 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
HK$136.21
-
72庫存量
|
Mouser 元件編號
511-SCT018H65G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
72庫存量
|
|
|
HK$136.21
|
|
|
HK$96.09
|
|
|
HK$91.82
|
|
|
HK$81.87
|
|
|
HK$76.45
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
79.4 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
- SCT040HU65G3AG
- STMicroelectronics
-
1:
HK$112.04
-
115庫存量
|
Mouser 元件編號
511-SCT040HU65G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
|
|
115庫存量
|
|
|
HK$112.04
|
|
|
HK$78.17
|
|
|
HK$63.54
|
|
|
HK$59.35
|
|
最少: 1
倍數: 1
:
600
|
|
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
650 V
|
7 A
|
40 mOhms
|
- 30 V, + 30 V
|
5 V
|
36 nC
|
- 55 C
|
+ 150 C
|
266 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3AG
- STMicroelectronics
-
1:
HK$107.52
-
76庫存量
|
Mouser 元件編號
511-SCT070H120G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
76庫存量
|
|
|
HK$107.52
|
|
|
HK$74.88
|
|
|
HK$60.25
|
|
|
HK$56.31
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
- SCT040H65G3AG
- STMicroelectronics
-
1:
HK$99.54
-
867庫存量
|
Mouser 元件編號
511-SCT040H65G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
|
|
867庫存量
|
|
|
HK$99.54
|
|
|
HK$69.05
|
|
|
HK$54.50
|
|
|
HK$50.88
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
40 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
39.5 nC
|
- 55 C
|
+ 175 C
|
221 W
|
Enhancement
|
AEC-Q101
|
|