SCT040W120G3AG

STMicroelectronics
511-SCT040W120G3AG
SCT040W120G3AG

製造商:

說明:
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 629

庫存:
629 可立即送貨
工廠前置作業時間:
17 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$107.19 HK$107.19
HK$74.97 HK$749.70
HK$56.72 HK$5,672.00
HK$53.59 HK$32,154.00
HK$53.51 HK$64,212.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: 碳化矽MOSFET
RoHS:  
Through Hole
HiP-247-3
N-Channel
1 Channel
1.2 kV
40 A
54 mOhms
- 18 V, + 18 V
4.2 V
56 nC
- 55 C
+ 200 C
312 W
Enhancement
AEC-Q101
品牌: STMicroelectronics
配置: Single
下降時間: 11 ns
封裝: Tube
產品類型: SiC MOSFETS
上升時間: 16 ns
原廠包裝數量: 600
子類別: Transistors
技術: SiC
標準斷開延遲時間: 23 ns
標準開啟延遲時間: 14 ns
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所選屬性: 0

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

汽車級碳化矽功率 MOSFET

STMicroelectronics 汽車級碳化矽功率MOSFET 採用ST 先進及創新的第二代/第三代SiC MOSFET技術開發。這些裝置 的單位面積導通電阻低,開關 性能非常好。這些MOSFET具有非常高的操作溫度能力 (TJ=200°C),以及非常快速且堅固的本征體二極管。

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.