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SCT018W65G3-4AG

Name: STMicroelectronics SCT018W65G3-4AG
Brand: STMicroelectronics
SKU: 511-SCT018W65G3-4AG
Price: 130.62 HKD
Availability: InStock

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Mouser 編號：

511-SCT018W65G3-4AG

製造商編號：

SCT018W65G3-4AG

製造商：

STMicroelectronics

說明：

碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package

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規格書:

SCT018W65G3-4AG 規格書 (PDF)

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工廠前置作業時間：: 17 週工廠預計生產時間數量大於所顯示的數量。

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單價:

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總價:

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估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$130.62	HK$130.62
	HK$101.11	HK$1,011.10
	HK$97.82	HK$9,782.00
	HK$95.27	HK$57,162.00
1,200	報價

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	碳化矽MOSFET
RoHS:
安裝風格:	Through Hole
封裝/外殼:	HiP-247-4
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	650 V
Id - C連續漏極電流:	55 A
Rds On - 漏-源電阻:	27 mOhms
Vgs - 閘極-源極電壓:	- 18 V, + 18 V
Vgs th - 門源門限電壓 :	4.2 V
Qg - 閘極充電:	77 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 200 C
Pd - 功率消耗 :	398 W
通道模式:	Enhancement
資格:	AEC-Q101
品牌:	STMicroelectronics
配置:	Single
下降時間:	29 ns
封裝:	Tube
產品類型:	SiC MOSFETS
上升時間:	13 ns
原廠包裝數量:	600
子類別:	Transistors
技術:	SiC
標準斷開延遲時間:	64 ns
標準開啟延遲時間:	24.5 ns

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篩選文檔:

規格書

SCT018W65G3-4AG 規格書 (PDF)

PCN

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

650V 3rd Gen SiC MOSFETs

STMicroelectronics 650V 3rd Generation Silicon Carbide (SiC) MOSFETs feature low on-state resistance (R_DS(on)) per area, even at high temperatures, and excellent switching performance. This translates into more efficient and compact systems. The SiC MOSFETs feature excellent switching performance over IGBTs, simplifying the thermal design of power electronic systems. These 650V SiC MOSFETs have been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The low RDS(on), low capacitances, and high switching operations improve application performance in frequency, energy efficiency, system size, and weight reduction.

SCTWA90N65G2Vx 650V Power MOSFETs

STMicroelectronics SCTWA90N65G2Vx 650V Power MOSFETs are Silicon Carbide (SiC) MOSFETs with 18mΩ typical and 119A ratings. These power MOSFETs come in a HiP247 and HiP247-4 packages. The SCTWA90N65G2Vx 650V power MOSFETs feature extremely low gate charge and input capacitances, high speed switching performance, and a source sensing pin for increased efficiency. These MOSFETs are developed using ST’s advanced and innovative 2^nd generation SiC MOSFET technology. Applications include power supply for renewable energy systems, high-frequency DC/DC converters, charging stations, switching mode power supply, DC/DC converters, and industrial motor control.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.