STMicroelectronics STH315N10F7 STripFET™ VII DeepGATE™ Power MOSFETs

STMicroelectronics STH315N10F7 STripFET™ VII DeepGATE™ Power MOSFETs are AEC-Q101 automotive-qualified N-channel Power MOSFETs that combine best-in-class on-state resistance with low internal capacitances and gate charge, enhancing both conduction and switching efficiency. STH315N10F7 MOSFETs also have high avalanche ruggedness to survive potentially damaging conditions. With a 100V rating, these STripFET VII DeepGATE MOSFETs provide an adequate safety margin to withstand typical over-voltage surges. STH315N10F7 STripFET VII DeepGATE MOSFETs are also well-suited for highly rugged performance in automotive and switching applications.

Available in TO-220 or 2-lead or 6-lead H2PAK industry-standard packages, the STMicroelectronics STH315N10F7 STripFET VII DeepGATE Power MOSFETs help designers reduce board size and maximize power density.

Features

  • AEC-Q101 qualified
  • Ultra-low RDS(on) 
  • Excellent FoM (figure of merit)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness
  • Available in TO-220 or 2-lead or 6-lead H2PAK packages

Applications

  • Switching applications

Specifications

  • 2.3mΩ maximum drain-source on-resistance (RDS(on))
  • 100V drain-source voltage (VDS)
  • ±20V gate-source voltage (VGS)
  • 180A continuous drain current (ID)
  • 720A pulsed drain current (IDM)
  • 315W total dissipation at TC = +25°C (PTOT)
  • 2.1W/°C derating factor
  • 1J single pulse avalanche energy (EAS)
  • -55°C to +175°C operating junction and storage temperature range (Tj, Tstg)

Videos

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零件編號 規格書 封裝/外殼 安裝風格
STH315N10F7-6 STH315N10F7-6 規格書 TO-263-7 SMD/SMT
STH315N10F7-2 STH315N10F7-2 規格書 H2PAK-2 SMD/SMT
STP315N10F7 STP315N10F7 規格書 TO-220-3 Through Hole
發佈日期: 2014-07-10 | 更新日期: 2022-03-11