|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
- SCT016H120G3AG
- STMicroelectronics
-
1:
HK$191.69
-
922庫存量
-
新產品
|
Mouser 元件編號
511-SCT016H120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
|
|
922庫存量
|
|
|
HK$191.69
|
|
|
HK$138.59
|
|
|
HK$138.51
|
|
|
HK$138.34
|
|
|
HK$113.03
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
112 A
|
22 mOhms
|
- 10 V, + 22 V
|
3 V
|
150 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
- SCT011HU75G3AG
- STMicroelectronics
-
1:
HK$205.58
-
274庫存量
-
600預期9/3/2026
-
新產品
|
Mouser 元件編號
511-SCT011HU75G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
|
|
274庫存量
600預期9/3/2026
|
|
|
HK$205.58
|
|
|
HK$151.08
|
|
|
HK$151.00
|
|
|
HK$123.38
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
750 V
|
110 A
|
15 mOhms
|
- 10 V, + 22 V
|
3.2 V
|
154 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
- SCT012W90G3-4AG
- STMicroelectronics
-
1:
HK$170.57
-
640庫存量
-
新產品
|
Mouser 元件編號
511-SCT012W90G3-4AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
|
|
640庫存量
|
|
|
HK$170.57
|
|
|
HK$145.41
|
|
|
HK$125.77
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
15.8 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
138 nC
|
- 55 C
|
+ 200 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
- SCT020HU120G3AG
- STMicroelectronics
-
1:
HK$168.59
-
739庫存量
-
新產品
|
Mouser 元件編號
511-SCT020HU120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
|
|
739庫存量
|
|
|
HK$168.59
|
|
|
HK$139.66
|
|
|
HK$120.75
|
|
|
HK$112.04
|
|
|
報價
|
|
|
報價
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
|
555 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
HK$157.00
-
513庫存量
-
新產品
|
Mouser 元件編號
511-SCT020W120G3-4AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
513庫存量
|
|
|
HK$157.00
|
|
|
HK$129.55
|
|
|
HK$128.48
|
|
|
HK$126.26
|
|
|
檢視
|
|
|
報價
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
Hip247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
+ 200 C
|
541 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
HK$148.37
-
502庫存量
-
新產品
|
Mouser 元件編號
511-SCT025W120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
502庫存量
|
|
|
HK$148.37
|
|
|
HK$118.78
|
|
|
HK$102.67
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
- SCT040HU120G3AG
- STMicroelectronics
-
1:
HK$111.05
-
1,011庫存量
-
600預期4/1/2027
-
新產品
|
Mouser 元件編號
511-SCT040HU120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
|
|
1,011庫存量
600預期4/1/2027
|
|
|
HK$111.05
|
|
|
HK$77.76
|
|
|
HK$68.55
|
|
|
HK$67.24
|
|
|
HK$58.12
|
|
|
報價
|
|
|
報價
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
72 mOhms
|
- 10 V, + 22 V
|
3 V
|
54 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3AG
- STMicroelectronics
-
1:
HK$141.06
-
14庫存量
-
2,000預期12/10/2026
-
新產品
|
Mouser 元件編號
511-SCT025H120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
14庫存量
2,000預期12/10/2026
|
|
|
HK$141.06
|
|
|
HK$100.12
|
|
|
HK$93.46
|
|
|
HK$76.28
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
HK$168.92
-
160庫存量
|
Mouser 元件編號
511-SCT012H90G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
160庫存量
|
|
|
HK$168.92
|
|
|
HK$121.33
|
|
|
HK$117.87
|
|
|
HK$96.26
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
12 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
138 nC
|
- 55 C
|
+ 175 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
HK$107.19
-
629庫存量
|
Mouser 元件編號
511-SCT040W120G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
629庫存量
|
|
|
HK$107.19
|
|
|
HK$74.97
|
|
|
HK$56.72
|
|
|
HK$53.59
|
|
|
HK$53.51
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
- SCT040HU65G3AG
- STMicroelectronics
-
1:
HK$104.23
-
142庫存量
|
Mouser 元件編號
511-SCT040HU65G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
|
|
142庫存量
|
|
|
HK$104.23
|
|
|
HK$73.08
|
|
|
HK$63.54
|
|
|
HK$51.95
|
|
|
HK$51.87
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
650 V
|
7 A
|
40 mOhms
|
- 30 V, + 30 V
|
5 V
|
36 nC
|
- 55 C
|
+ 150 C
|
266 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
- SCT070HU120G3AG
- STMicroelectronics
-
1:
HK$112.20
-
73庫存量
-
1,200預期27/2/2026
|
Mouser 元件編號
511-SCT070HU120G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
|
|
73庫存量
1,200預期27/2/2026
|
|
|
HK$112.20
|
|
|
HK$78.58
|
|
|
HK$69.54
|
|
|
HK$56.72
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
- SCTW40N120G2VAG
- STMicroelectronics
-
1:
HK$141.38
-
593庫存量
|
Mouser 元件編號
511-SCTW40N120G2VAG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
|
|
593庫存量
|
|
|
HK$141.38
|
|
|
HK$87.71
|
|
|
HK$76.61
|
|
|
HK$76.53
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
- SCTWA40N12G24AG
- STMicroelectronics
-
1:
HK$144.34
-
90庫存量
|
Mouser 元件編號
511-SCTWA40N12G24AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
|
|
90庫存量
|
|
|
HK$144.34
|
|
|
HK$102.59
|
|
|
HK$79.08
|
|
|
HK$78.58
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
33 A
|
105 mOhms
|
- 18 V, + 18 V
|
5 V
|
63 nC
|
- 55 C
|
+ 200 C
|
290 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
HK$199.17
-
600預期27/7/2026
|
Mouser 元件編號
511-SCT015W120G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
600預期27/7/2026
|
|
|
HK$199.17
|
|
|
HK$163.00
|
|
|
HK$143.93
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
15 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
167 nC
|
- 55 C
|
+ 200 C
|
673 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
HK$149.36
-
1,200在途量
|
Mouser 元件編號
511-SCT025W120G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
1,200在途量
在途量:
600 預期1/5/2026
600 預期14/9/2026
|
|
|
HK$149.36
|
|
|
HK$119.60
|
|
|
HK$103.41
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
- SCT040H120G3AG
- STMicroelectronics
-
1:
HK$104.23
-
996預期22/4/2026
|
Mouser 元件編號
511-SCT040H120G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
|
|
996預期22/4/2026
|
|
|
HK$104.23
|
|
|
HK$73.08
|
|
|
HK$63.54
|
|
|
HK$63.46
|
|
|
HK$51.87
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
54 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055HU65G3AG
- STMicroelectronics
-
1:
HK$102.83
-
1,113預期23/2/2026
|
Mouser 元件編號
511-SCT055HU65G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
1,113預期23/2/2026
|
|
|
HK$102.83
|
|
|
HK$72.50
|
|
|
HK$62.88
|
|
|
HK$51.38
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
29 nC
|
- 55 C
|
+ 175 C
|
185 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3-7
- STMicroelectronics
-
1:
HK$137.93
-
100在途量
-
新產品
|
Mouser 元件編號
511-SCT025H120G3-7
新產品
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
100在途量
|
|
|
HK$137.93
|
|
|
HK$106.70
|
|
|
HK$92.23
|
|
|
HK$92.23
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
- SCT040W120G3-4
- STMicroelectronics
-
1:
HK$93.54
-
100在途量
-
新產品
|
Mouser 元件編號
511-SCT040W120G3-4
新產品
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STMicroelectronics
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碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
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100在途量
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HK$93.54
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HK$76.20
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HK$63.46
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HK$56.55
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HK$48.00
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最少: 1
倍數: 1
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Through Hole
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HiP247-4
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N-Channel
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1 Channel
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1.2 kV
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40 A
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54 mOhms
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- 10 V, + 22 V
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3.1 V
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56 nC
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- 55 C
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+ 200 C
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312 W
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Enhancement
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AEC-Q101
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碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
- SCTWA40N120G2V
- STMicroelectronics
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1:
HK$148.29
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無庫存前置作業時間 32 週
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NRND
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Mouser 元件編號
511-SCTWA40N120G2V
NRND
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STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
|
|
無庫存前置作業時間 32 週
|
|
|
HK$148.29
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HK$112.94
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HK$94.94
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最少: 1
倍數: 1
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Through Hole
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HiP247-3
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N-Channel
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1 Channel
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1.2 kV
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36 A
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100 mOhms
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- 10 V, + 22 V
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2.45 V
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61 nC
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- 55 C
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+ 200 C
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278 W
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Enhancement
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