|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
- SCT020HU120G3AG
- STMicroelectronics
-
1:
HK$187.09
-
11庫存量
-
1,200在途量
-
新產品
|
Mouser 元件編號
511-SCT020HU120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
|
|
11庫存量
1,200在途量
在途量:
600 預期5/3/2027
600 預期12/3/2027
|
|
|
HK$187.09
|
|
|
HK$139.74
|
|
|
HK$117.96
|
|
|
HK$106.86
|
|
最少: 1
倍數: 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
|
555 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
- SCT012W90G3-4AG
- STMicroelectronics
-
1:
HK$182.48
-
630庫存量
|
Mouser 元件編號
511-SCT012W90G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
|
|
630庫存量
|
|
|
HK$182.48
|
|
|
HK$115.00
|
|
|
HK$97.32
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
15.8 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
138 nC
|
- 55 C
|
+ 200 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
HK$219.64
-
580庫存量
|
Mouser 元件編號
511-SCT015W120G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
580庫存量
|
|
|
HK$219.64
|
|
|
HK$175.83
|
|
|
HK$152.07
|
|
|
HK$143.93
|
|
|
報價
|
|
|
報價
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
15 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
167 nC
|
- 55 C
|
+ 200 C
|
673 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
HK$166.29
-
311庫存量
-
600在途量
|
Mouser 元件編號
511-SCT020W120G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
311庫存量
600在途量
|
|
|
HK$166.29
|
|
|
HK$103.98
|
|
|
HK$98.89
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
Hip247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
+ 200 C
|
541 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
HK$155.77
-
298庫存量
-
600預期29/1/2027
|
Mouser 元件編號
511-SCT025W120G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
298庫存量
600預期29/1/2027
|
|
|
HK$155.77
|
|
|
HK$96.91
|
|
|
HK$90.91
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
HK$114.18
-
345庫存量
|
Mouser 元件編號
511-SCT040W120G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
345庫存量
|
|
|
HK$114.18
|
|
|
HK$80.23
|
|
|
HK$61.24
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
HK$180.92
-
11庫存量
-
1,000預期12/3/2027
|
Mouser 元件編號
511-SCT012H90G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
11庫存量
1,000預期12/3/2027
|
|
|
HK$180.92
|
|
|
HK$129.79
|
|
|
HK$117.87
|
|
|
HK$117.79
|
|
|
HK$110.07
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
12 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
138 nC
|
- 55 C
|
+ 175 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
HK$173.44
-
46庫存量
-
1,200預期19/2/2027
|
Mouser 元件編號
511-SCT025W120G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
46庫存量
1,200預期19/2/2027
|
|
|
HK$173.44
|
|
|
HK$119.68
|
|
|
HK$109.24
|
|
|
HK$100.45
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
- SCT040HU65G3AG
- STMicroelectronics
-
1:
HK$112.04
-
21庫存量
-
600在途量
|
Mouser 元件編號
511-SCT040HU65G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
|
|
21庫存量
600在途量
|
|
|
HK$112.04
|
|
|
HK$78.17
|
|
|
HK$63.54
|
|
|
HK$59.35
|
|
最少: 1
倍數: 1
:
600
|
|
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
650 V
|
7 A
|
40 mOhms
|
- 30 V, + 30 V
|
5 V
|
36 nC
|
- 55 C
|
+ 150 C
|
266 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
- SCTW40N120G2VAG
- STMicroelectronics
-
1:
HK$165.80
-
5庫存量
-
600預期19/2/2027
|
Mouser 元件編號
511-SCTW40N120G2VAG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
|
|
5庫存量
600預期19/2/2027
|
|
|
HK$165.80
|
|
|
HK$93.87
|
|
|
HK$88.78
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
- SCT011HU75G3AG
- STMicroelectronics
-
1:
HK$225.80
-
1,200預期11/6/2027
-
新產品
|
Mouser 元件編號
511-SCT011HU75G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
|
|
1,200預期11/6/2027
|
|
|
HK$225.80
|
|
|
HK$173.44
|
|
|
HK$155.77
|
|
|
HK$141.06
|
|
最少: 1
倍數: 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
750 V
|
110 A
|
15 mOhms
|
- 10 V, + 22 V
|
3.2 V
|
154 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
- SCT016H120G3AG
- STMicroelectronics
-
1:
HK$205.25
-
1,985在途量
-
新產品
|
Mouser 元件編號
511-SCT016H120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
|
|
1,985在途量
|
|
|
HK$205.25
|
|
|
HK$148.37
|
|
|
HK$138.34
|
|
|
HK$138.26
|
|
|
HK$129.22
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
112 A
|
22 mOhms
|
- 10 V, + 22 V
|
3 V
|
150 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3AG
- STMicroelectronics
-
1:
HK$148.54
-
1,997預期19/2/2027
|
Mouser 元件編號
511-SCT025H120G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
1,997預期19/2/2027
|
|
|
HK$148.54
|
|
|
HK$107.11
|
|
|
HK$93.46
|
|
|
HK$89.68
|
|
|
HK$87.21
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
- SCT040H120G3AG
- STMicroelectronics
-
1:
HK$112.04
-
996預期2/11/2026
|
Mouser 元件編號
511-SCT040H120G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
|
|
996預期2/11/2026
|
|
|
HK$112.04
|
|
|
HK$78.17
|
|
|
HK$63.54
|
|
|
HK$59.35
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
54 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
- SCT040HU120G3AG
- STMicroelectronics
-
1:
HK$118.78
-
1,200預期5/2/2027
-
新產品
|
Mouser 元件編號
511-SCT040HU120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
|
|
1,200預期5/2/2027
|
|
|
HK$118.78
|
|
|
HK$88.28
|
|
|
HK$73.24
|
|
|
HK$64.03
|
|
最少: 1
倍數: 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
72 mOhms
|
- 10 V, + 22 V
|
3 V
|
54 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055HU65G3AG
- STMicroelectronics
-
1:
HK$111.22
-
1,800預期26/2/2027
|
Mouser 元件編號
511-SCT055HU65G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
1,800預期26/2/2027
|
|
|
HK$111.22
|
|
|
HK$84.75
|
|
|
HK$70.61
|
|
|
HK$62.88
|
|
最少: 1
倍數: 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
29 nC
|
- 55 C
|
+ 175 C
|
185 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
- SCT070HU120G3AG
- STMicroelectronics
-
1:
HK$119.52
-
1,199預期28/9/2026
|
Mouser 元件編號
511-SCT070HU120G3AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
|
|
1,199預期28/9/2026
|
|
|
HK$119.52
|
|
|
HK$84.09
|
|
|
HK$69.54
|
|
|
HK$64.94
|
|
最少: 1
倍數: 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
- SCT040W120G3-4
- STMicroelectronics
-
1:
HK$106.12
-
100在途量
|
Mouser 元件編號
511-SCT040W120G3-4
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
|
|
100在途量
|
|
|
HK$106.12
|
|
|
HK$71.19
|
|
|
HK$62.55
|
|
|
HK$53.59
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|