Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

電晶體的類型

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STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A 12庫存量
600預期14/5/2027
最少: 1
倍數: 1
: 600

SiC MOSFETS
STMicroelectronics 碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac 2,309庫存量
最少: 1
倍數: 1
: 3,000

SiC MOSFETS SiC SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics 碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac 1,597庫存量
最少: 1
倍數: 1
: 3,000

SiC MOSFETS SiC SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package 58庫存量
1,200在途量
最少: 1
倍數: 1
: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package 596庫存量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package 453庫存量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package 352庫存量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole Hip247-4 N-Channel


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package 364庫存量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole HiP247-3 N-Channel
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package 839庫存量
最少: 1
倍數: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A 246庫存量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A 339庫存量
600預期29/1/2027
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package 487庫存量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel


STMicroelectronics 碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package 517庫存量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package 481庫存量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel
STMicroelectronics 碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package 1,414庫存量
最少: 1
倍數: 1
: 1,800

SiC MOSFETS SiC SMD/SMT TOLL-8 N-Channel


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package 11庫存量
1,000在途量
最少: 1
倍數: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package 45庫存量
1,000預期23/7/2027
最少: 1
倍數: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package 80庫存量
1,200預期5/2/2027
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A 48庫存量
最少: 1
倍數: 1
: 600

SiC MOSFETS SiC SMD/SMT H2PAK-2 N-Channel


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package 49庫存量
最少: 1
倍數: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package 40庫存量
1,200預期29/1/2027
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A 822庫存量
最少: 1
倍數: 1
: 1,000

SiC MOSFETS SiC SMD/SMT N-Channel
STMicroelectronics 碳化矽MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package 440庫存量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an 357庫存量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole N-Channel
STMicroelectronics MOSFET N-channel 40 V, 0.85 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x 5,393庫存量
最少: 1
倍數: 1
: 3,000

MOSFETs Si SMD/SMT PowerFLAT5x6-8 N-Channel