STMicroelectronics Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.

Features

Automotive-grade (AG) qualified devices
Very high-temperature handling capability (max. T_J = 200°C)
Very low switching losses (minimal variation versus temperature) allowing to operate at a very high switching frequency

Low on-state resistance over the temperature range
Simple to drive
Very fast and robust intrinsic body diode proved

Applications

Solar inverters, UPS
Motor drives

High-voltage DC-DC converters
Switch mode power supplies

SiC MOSFET Portfolio

The STMicro STPOWER SiC MOSFET portfolio offers state-of-the-art packages (HiP247, H2PAK-7, TO-247 long leads, STPAK, and HU3PAK) designed for automotive and industrial applications.