IXYS X2級HiPerFET™功率MOSFET
IXYS X2級HiPerFET™功率MOSFET專為高效、高速功率切換應用而設計。超級結X2級MOSFET具有低閘極電荷和優異的堅固性，內建快速本徵二極體。這些MOSFET包括隔離型在內，提供有多種標準工業封裝形式。典型應用包括開關模式和諧振模式電源供應器、DC-DC轉換器、PFC電路、AC和DC馬達驅動器，以及機器人和伺服控制。
該X2級MOSFET具有低導通電阻、低閘極電荷和優異的dv/dt 效能。這些MOSFET採用電荷補償原理和專利製程技術開發而成。該X2級MOSFET配備快速軟恢復體二極體，可降低開關損耗和電磁干擾 (EMI)。
特點
- 超低導通電阻RDS(ON)，超低閘極電荷Qg
- 快速體二極體
- 耐Dv/dt變化
- 高效率
- 高功率密度
- 雪崩測試
- 低封裝電感
- 國際標準封裝
- 易於安裝
- 節省空間
應用
- 工業開關模式和諧振模式電源供應器
- 電動車輛電池充電器
- AC和DC馬達驅動器
- DC/DC轉換器
- 可再生能源逆變器
- 功率因數校正 (PFC) 電路
- 機器人與伺服控制
相關產品
IXYS IXT 200V X4 Ultra Junction Power MOSFETs
N-channel devices with either 10.6mΩ, 13mΩ, or 21mΩ RDS(on) and a 200V maximum drain-source voltage.
IXYS IXFH60N65X2-4 & IXFH80N65X2-4 X2-Class MOSFETs
Offers low drain-source resistance (38mΩ or 52mΩ) and low gate charge in an avalanche-rated package.
IXYS X-Class Power MOSFETs
Easy-to-mount high-power density N-Channel Enhancement Mode MOSFETs with a low RDS(ON) and QG.
IXYS X3-Class HiPerFET™功率MOSFET
具備N通道強化模式的突崩等級快速固有二極體。
IXYS X4-Class 135V-200V Power MOSFETs
Power MOSFETs that come with significantly reduced resistance RDS(on) and gate charge Qg.
IXYS HiPerFET™ Power MOSFETs
High-current HiPerFET™ power MOSFETs for hard switching & resonant mode applications.
IXYS Ultra Junction MOSFETs
Feature low RDS(on) and low Qg in low inductance industry standard packages.
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