STMicroelectronics 碳化矽MOSFET

結果: 69
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 資格
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A 252庫存量
600在途量
最少: 1
倍數: 1
: 600

STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A 969庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 30 A 40 mOhms - 10 V, + 22 V 4.2 V 39.5 nC - 55 C + 175 C 221 W Enhancement AEC-Q101
STMicroelectronics 碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac 2,329庫存量
最少: 1
倍數: 1
: 3,000

SMD/SMT PowerFLAT-5 N-Channel 1 Channel 650 V 40 A 67 mOhms - 10 V, + 22 V 5 V 73 nC - 55 C + 175 C 417 W Enhancement
STMicroelectronics 碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package 714庫存量
最少: 1
倍數: 1

Through Hole HiP-247-3 N-Channel 1 Channel 1.2 kV 91 A 21 mOhms - 10 V, + 22 V 4.9 V 150 nC - 55 C + 200 C 547 W Enhancement
STMicroelectronics 碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24 47庫存量
600預期20/4/2026
最少: 1
倍數: 1

Through Hole HiP-247-3 N-Channel 1 Channel 650 V 90 A 25 mOhms - 10 V, + 22 V 1.9 V 157 nC - 55 C + 200 C 390 W Enhancement
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package 922庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT H2PAK-7 N-Channel 1 Channel 1.2 kV 112 A 22 mOhms - 10 V, + 22 V 3 V 150 nC - 55 C + 175 C 652 W Enhancement AEC-Q101
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package 274庫存量
600預期9/3/2026
最少: 1
倍數: 1
: 600

SMD/SMT HU3PAK-7 N-Channel 1 Channel 750 V 110 A 15 mOhms - 10 V, + 22 V 3.2 V 154 nC - 55 C + 175 C 652 W Enhancement AEC-Q101
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package 640庫存量
最少: 1
倍數: 1

Through Hole HiP247-3 N-Channel 1 Channel 900 V 110 A 15.8 mOhms - 10 V, + 22 V 3.1 V 138 nC - 55 C + 200 C 625 W Enhancement AEC-Q101
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package 739庫存量
最少: 1
倍數: 1
: 600

SMD/SMT HU3PAK-7 N-Channel 1 Channel 1.2 kV 100 A 28 mOhms - 10 V, + 22 V 3 V 121 nC - 55 C 555 W Enhancement AEC-Q101


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package 513庫存量
最少: 1
倍數: 1

Through Hole Hip247-4 N-Channel 1 Channel 1.2 kV 100 A 28 mOhms - 10 V, + 22 V 3 V 121 nC - 55 C + 200 C 541 W Enhancement AEC-Q101

STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package 502庫存量
最少: 1
倍數: 1

Through Hole HiP247-3 N-Channel 1 Channel 1.2 kV 56 A 37 mOhms - 10 V, + 22 V 3 V 73 nC - 55 C + 200 C 388 W Enhancement AEC-Q101
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package 1,082庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT H2PAK-7 N-Channel 1 Channel 650 V 60 A 39.3 mOhms - 10 V, + 22 V 3 V 48.6 nC - 55 C + 175 C 300 W Enhancement AEC-Q101
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package 1,011庫存量
600預期4/1/2027
最少: 1
倍數: 1
: 600

SMD/SMT HU3PAK-7 N-Channel 1 Channel 1.2 kV 40 A 72 mOhms - 10 V, + 22 V 3 V 54 nC - 55 C + 175 C 300 W Enhancement AEC-Q101


STMicroelectronics 碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package 547庫存量
最少: 1
倍數: 1

Through Hole HiP247-4 N-Channel 1 Channel 650 V 30 A 63 mOhms - 10 V, + 22 V 3 V 37.5 nC - 55 C + 200 C 240 W Enhancement


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package 641庫存量
最少: 1
倍數: 1

Through Hole HiP247-4 N-Channel 1 Channel 650 V 30 A 63 mOhms - 10 V, + 22 V 3 V 37.5 nC - 55 C + 200 C 240 W Enhancement AEC-Q101
STMicroelectronics 碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package 1,779庫存量
最少: 1
倍數: 1
: 1,800

SMD/SMT TOLL-8 N-Channel 1 Channel 650 V 30 A 72 mOhms - 10 V, + 22 V 3 V 31 nC - 55 C + 175 C 234 W Enhancement
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package 14庫存量
2,000預期12/10/2026
最少: 1
倍數: 1
: 1,000

SMD/SMT H2PAK-7 N-Channel 1 Channel 1.2 kV 55 A 37 mOhms - 10 V, + 22 V 3 V 73 nC - 55 C + 175 C 375 W Enhancement AEC-Q101
STMicroelectronics 碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package 37庫存量
最少: 1
倍數: 1
: 1,800

SMD/SMT TOLL-8 N-Channel 1 Channel 650 V 35 A 63 mOhms - 10 V, + 22 V 3 V 42.5 nC - 55 C + 175 C 288 W Enhancement


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package 425庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT H2PAK-7 N-Channel 1 Channel 900 V 110 A 12 mOhms - 18 V, + 18 V 4.2 V 138 nC - 55 C + 175 C 625 W Enhancement AEC-Q101


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package 202庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT H2PAK-7 N-Channel 1 Channel 650 V 55 A 27 mOhms - 18 V, + 18 V 4.2 V 79.4 nC - 55 C + 175 C 385 W Enhancement AEC-Q101


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package 552庫存量
最少: 1
倍數: 1

Through Hole HiP-247-4 N-Channel 1 Channel 650 V 55 A 27 mOhms - 18 V, + 18 V 4.2 V 77 nC - 55 C + 200 C 398 W Enhancement AEC-Q101


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A 353庫存量
最少: 1
倍數: 1

Through Hole HiP-247-4 N-Channel 1 Channel 650 V 60 A 29 mOhms - 18 V, + 18 V 4.2 V 51 nC - 55 C + 200 C 313 W Enhancement


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A 698庫存量
最少: 1
倍數: 1

Through Hole HiP-247-4 N-Channel 1 Channel 1.2 kV 40 A 54 mOhms - 18 V, + 18 V 4.2 V 56 nC - 55 C + 200 C 312 W Enhancement


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package 629庫存量
最少: 1
倍數: 1

Through Hole HiP-247-3 N-Channel 1 Channel 1.2 kV 40 A 54 mOhms - 18 V, + 18 V 4.2 V 56 nC - 55 C + 200 C 312 W Enhancement AEC-Q101


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package 483庫存量
1,200預期20/4/2026
最少: 1
倍數: 1

Through Hole HiP-247-4 N-Channel 1 Channel 1.2 kV 30 A 87 mOhms - 18 V, + 18 V 4.2 V 41 nC - 55 C + 200 C 236 W Enhancement AEC-Q101