PolarP3™ HiPerFET™ Power MOSFETs

IXYS PolarP3™ HiPerFET™ Power MOSFETs are the latest addition to the benchmark high-performance Polar-Series for the product portfolio between 300V, 500V, and 600V. The high Figure of Merit (FOM), which is the multiplication of Qg and RDS(on), provides an excellent alternative to weaker super junction technologies. These PolarP3 HiPerFETs demonstrate up to a 12% reduction in on-state resistance (Rdson), a 14 percent reduction in gate charge (Qg) and as high as a 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing the total power density of the device.

結果: 60
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝

IXYS MOSFET 600V 22A 0.36Ohm PolarP3 Power MOSFET 4,424庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 22 A 360 mOhms - 30 V, 30 V 5 V 38 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 1,542庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 150 A 19 mOhms - 20 V, 20 V 3 V 197 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube

IXYS MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET 267庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 64 A 95 mOhms - 30 V, 30 V 5 V 145 nC - 55 C + 150 C 1.13 kW Enhancement HiPerFET Tube
IXYS MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET 218庫存量
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 500 V 60 A 100 mOhms - 30 V, 30 V 5 V 96 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube
IXYS MOSFET 500V 132A 0.039Ohm PolarP3 Power MOSFET 142庫存量
最少: 1
倍數: 1

Si Through Hole PLUS-264-3 N-Channel 1 Channel 500 V 132 A 39 mOhms - 30 V, 30 V 5 V 250 nC - 55 C + 150 C 1.89 kW Enhancement HiPerFET Tube

IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 646庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 150 A 19 mOhms - 20 V, 20 V 3 V 197 nC - 55 C + 150 C 1.3 mW Enhancement HiPerFET Tube

IXYS MOSFET 600V 80A 0.07Ohm PolarP3 Power MOSFET 251庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 80 A 70 mOhms - 30 V, 30 V 5 V 190 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube

IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 170庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 120 A 27 mOhms - 20 V, 20 V 3 V 150 nC - 55 C + 150 C 1.13 kW Enhancement HiPerFET Tube
IXYS MOSFET DiscMSFT NChHiPerFET-Polar3 TO-263D2 21庫存量
350預期4/5/2026
最少: 1
倍數: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 300 V 36 A 110 mOhms - 20 V, 20 V 2.5 V 30 nC - 55 C + 150 C 347 W Enhancement HiPerFET Tube
IXYS MOSFET 500V 98A 0.05Ohm PolarP3 Power MOSFET 24庫存量
300預期2/7/2026
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 98 A 50 mOhms - 30 V, 30 V 5 V 197 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube

IXYS MOSFET 500V 78A 0.068Ohm PolarP3 Power MOSFET 172庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 78 A 68 mOhms - 30 V, 30 V 5 V 147 nC - 55 C + 150 C 1.13 kW Enhancement HiPerFET Tube
IXYS MOSFET 600V 22A 0.36Ohm PolarP3 Power MOSFET 480庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 22 A 360 mOhms - 30 V, 30 V 5 V 38 nC 500 W HiPerFET Tube
IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 176庫存量
最少: 1
倍數: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 300 V 94 A 36 mOhms - 20 V, 20 V 3 V 102 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube
IXYS MOSFET Polar3 HiPerFET Power MOSFET 262庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 26 A 240 mOhms - 30 V, 30 V 3 V 42 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFET Polar3 HiPerFET Power MOSFET 286庫存量
最少: 1
倍數: 1

Si Through Hole TO-3P-3 N-Channel 500 V 26 A 240 mOhms HiPerFET Tube
IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 295庫存量
650在途量
最少: 1
倍數: 1

Si Through Hole PLUS-264-3 N-Channel 1 Channel 300 V 210 A 14.5 mOhms - 20 V, 20 V 5 V 268 nC - 55 C + 150 C 1.89 kW Enhancement HiPerFET Tube

IXYS MOSFET Polar3 HiPerFET Power MOSFET 1,317庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 26 A 240 mOhms - 30 V, 30 V 5 V 42 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube

IXYS MOSFET Polar3 HiPerFET Power MOSFET 280庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 500 V 34 A 180 mOhms HiPerFET Tube

IXYS MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET 475庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 145 mOhms - 30 V, 30 V 5 V 94 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube
IXYS MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET 553庫存量
950在途量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 64 A 95 mOhms - 30 V, 30 V 5 V 145 nC - 55 C + 150 C 1.13 kW Enhancement HiPerFET Tube
IXYS MOSFET 600V 80A 0.07Ohm PolarP3 Power MOSFET 173庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 80 A 70 mOhms - 30 V, 30 V 5 V 190 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFET Polar3 HiPerFET Power MOSFET 1,133庫存量
最少: 1
倍數: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 500 V 20 A 300 mOhms - 30 V, 30 V 5 V 36 nC - 55 C + 150 C 380 W Enhancement HiPerFET Tube
IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 505庫存量
450預期16/7/2026
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 94 A 36 mOhms - 20 V, 20 V 3 V 102 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube

IXYS MOSFET Polar3 HiPerFET Power MOSFET 116庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 20 A 300 mOhms - 30 V, 30 V 3 V 36 nC - 55 C + 150 C 380 W Enhancement HiPerFET Tube

IXYS MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET 309庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 28 A 260 mOhms - 30 V, 30 V 5 V 50 nC - 55 C + 150 C 695 W Enhancement HiPerFET Tube