IXFQ94N30P3

IXYS
747-IXFQ94N30P3
IXFQ94N30P3

製造商:

說明:
MOSFET N-Channel: Power MOSFET w/Fast Diode

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 176

庫存:
176 可立即送貨
工廠前置作業時間:
26 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$108.42 HK$108.42
HK$65.68 HK$656.80
HK$56.39 HK$6,766.80
HK$54.25 HK$27,667.50

商品屬性 屬性值 選擇屬性
IXYS
產品類型: MOSFET
RoHS:  
Si
Through Hole
TO-3P-3
N-Channel
1 Channel
300 V
94 A
36 mOhms
- 20 V, 20 V
3 V
102 nC
- 55 C
+ 150 C
1.04 mW
Enhancement
HiPerFET
Tube
品牌: IXYS
配置: Single
組裝國家: Not Available
擴散國: Not Available
原產國: KR
產品類型: MOSFETs
系列: IXFQ94N30
原廠包裝數量: 30
子類別: Transistors
晶體管類型: 1 N-Channel
每件重量: 1.600 g
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所選屬性: 0

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CNHTS:
8541210000
CAHTS:
8541900000
USHTS:
8541290065
JPHTS:
8542900006
TARIC:
8541900000
MXHTS:
8541900299
ECCN:
EAR99

PolarP3™ HiPerFET™ Power MOSFETs

IXYS PolarP3™ HiPerFET™ Power MOSFETs are the latest addition to the benchmark high-performance Polar-Series for the product portfolio between 300V, 500V, and 600V. The high Figure of Merit (FOM), which is the multiplication of Qg and RDS(on), provides an excellent alternative to weaker super junction technologies. These PolarP3 HiPerFETs demonstrate up to a 12% reduction in on-state resistance (Rdson), a 14 percent reduction in gate charge (Qg) and as high as a 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing the total power density of the device.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.