IXFH26N50P3

Name: IXYS IXFH26N50P3
Brand: IXYS
SKU: 747-IXFH26N50P3
Price: 73.9 HKD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

747-IXFH26N50P3

製造商編號：

IXFH26N50P3

製造商：

IXYS

說明：

MOSFET Polar3 HiPerFET Power MOSFET

規格書:

IXFH26N50P3 規格書

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於IXYS IXFH26N50P3的資訊

庫存量: 1,317

庫存：: 1,317 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 26 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$73.90	HK$73.90
	HK$43.40	HK$434.00
	HK$36.66	HK$4,399.20
	HK$32.96	HK$16,809.60
	HK$32.88	HK$33,537.60

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	IXYS
產品類型:	MOSFET
RoHS:
REACH - SVHC:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-247-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	500 V
Id - C連續漏極電流:	26 A
Rds On - 漏-源電阻:	240 mOhms
Vgs - 閘極-源極電壓:	- 30 V, 30 V
Vgs th - 門源門限電壓 :	5 V
Qg - 閘極充電:	42 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	500 W
通道模式:	Enhancement
公司名稱:	HiPerFET
封裝:	Tube
品牌:	IXYS
配置:	Single
組裝國家:	Not Available
擴散國:	Not Available
原產國:	KR
下降時間:	5 ns
互導 - 最小值:	14 S
產品類型:	MOSFETs
上升時間:	7 ns
系列:	HiPerFET
原廠包裝數量:	30
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	38 ns
標準開啟延遲時間:	21 ns
每件重量:	6 g

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

IXFH26N50P3 規格書

PCN

Product Change Notification (PDF)

此功能需要啟用JavaScript。

CNHTS:: 8541290000
TARIC:: 8541900000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 8541900299
ECCN:: EAR99

PolarP3™ HiPerFET™ Power MOSFETs

IXYS PolarP3™ HiPerFET™ Power MOSFETs are the latest addition to the benchmark high-performance Polar-Series for the product portfolio between 300V, 500V, and 600V. The high Figure of Merit (FOM), which is the multiplication of Q_g and R_DS(on), provides an excellent alternative to weaker super junction technologies. These PolarP3 HiPerFETs demonstrate up to a 12% reduction in on-state resistance (R_dson), a 14 percent reduction in gate charge (Q_g) and as high as a 20 percent increase in maximum power dissipation (P_d). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing the total power density of the device.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.