結果: 30
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
IXYS MOSFET MOSFET 650V/22A Ultra Junction X2 739庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 160 mOhms - 30 V, 30 V 2.7 V 38 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 650V/34A Ultra Junction X2 670庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 34 A 105 mOhms - 30 V, 30 V 2.7 V 56 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 650V/60A Ultra Junction X2 889庫存量
最少: 1
倍數: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 60 A 52 mOhms - 30 V, 30 V 2.7 V 107 nC - 55 C + 150 C 780 W Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 650V/46A Ultra Junction X2 403庫存量
最少: 1
倍數: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 76 mOhms - 30 V, 30 V 2.7 V 75 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube
IXYS MOSFET 650V/80A TO-247-4L 509庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 80 A 38 mOhms - 30 V, 30 V 3.5 V 140 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET MOSFET 650V/150A Ultra Junction X2 51庫存量
最少: 1
倍數: 1

Si Through Hole PLUS-264-3 N-Channel 1 Channel 650 V 150 A 17 mOhms - 30 V, 30 V 2.7 V 430 nC - 55 C + 150 C 1.56 kW Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 650V/80A Ultra Junction X2 851庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 80 A 40 mOhms - 30 V, 30 V 2.7 V 143 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET MOSFET 650V/100A Ultra Junction X2 534庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 650 V 100 A 30 mOhms - 30 V, 30 V 2.7 V 180 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube
IXYS MOSFET 650V/80A TO-268HV 315庫存量
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 650 V 80 A 38 mOhms - 30 V, 30 V 3.5 V 140 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 650V/100A Ultra Junction X2 120庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 100 A 30 mOhms - 30 V, 30 V 2.7 V 180 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 650V/120A Ultra Junction X2 154庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 120 A 24 mOhms - 30 V, 30 V 2.7 V 225 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFET MOSFET 650V/22A Ultra Junction X2 41庫存量
250預期23/9/2026
最少: 1
倍數: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 22 A 160 mOhms - 30 V, 30 V 2.7 V 38 nC - 55 C + 150 C 360 W Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 650V/22A Ultra Junction X2 185庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 22 A 160 mOhms - 30 V, 30 V 2.7 V 38 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFET 650V/12A TO-220 172庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 310 mOhms - 30 V, 30 V 3 V 18.5 nC - 55 C + 150 C 180 W Enhancement HiPerFET Tube
IXYS MOSFET 650V/22A OVERMOLDED TO-220 263庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 145 mOhms - 30 V, 30 V 3.5 V 37 nC - 55 C + 150 C 37 W Enhancement HiPerFET Tube
IXYS MOSFET 650V/34A Ultra Junction X2-Class 503庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 34 A 105 mOhms - 30 V, 30 V 2.7 V 56 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFET 650V/34A OVERMOLDED TO-220 184庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 34 A 100 mOhms - 30 V, 30 V 3.5 V 56 nC - 55 C + 150 C 40 W Enhancement HiPerFET Tube
IXYS MOSFET 650V/12A TO-263 無庫存前置作業時間 27 週
最少: 1
倍數: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 12 A 310 mOhms - 30 V, 30 V 3 V 18.5 nC - 55 C + 150 C 180 W Enhancement HiPerFET Tube
IXYS MOSFET 650V/18A TO-263 無庫存前置作業時間 27 週
最少: 300
倍數: 50

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 18 A 200 mOhms - 30 V, 30 V 3 V 29 nC - 55 C + 150 C 290 W Enhancement HiPerFET Tube
IXYS MOSFET 650V/8A TO-263 無庫存前置作業時間 27 週
最少: 1
倍數: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 8 A 450 mOhms - 30 V, 30 V 3 V 11 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube
IXYS MOSFET 650V/12A TO-247 暫無庫存
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 12 A 310 mOhms - 30 V, 30 V 3 V 18.5 nC - 55 C + 150 C 180 W Enhancement HiPerFET Tube
IXYS MOSFET 650V/18A TO-247 無庫存前置作業時間 27 週
最少: 300
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 18 A 200 mOhms - 30 V, 30 V 3 V 29 nC - 55 C + 150 C 290 W Enhancement HiPerFET Tube
IXYS MOSFET 650V/60A TO-247-4L 無庫存前置作業時間 27 週
最少: 300
倍數: 30

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 60 A 52 mOhms - 30 V, 30 V 3.5 V 108 nC - 55 C + 150 C 780 W Enhancement HiPerFET Tube
IXYS MOSFET MOSFET 650V/120A Ultra Junction X2 無庫存前置作業時間 27 週
最少: 300
倍數: 25
Si Through Hole TO-264-3 N-Channel 1 Channel 650 V 120 A 24 mOhms - 30 V, 30 V 2.7 V 225 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFET 650V/80A Ultra Junction X2-Class 無庫存前置作業時間 27 週
最少: 300
倍數: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 650 V 80 A 38 mOhms - 30 V, 30 V 2.7 V 140 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube