IXFX100N65X2

IXYS
747-IXFX100N65X2
IXFX100N65X2

製造商：

說明：
MOSFET MOSFET 650V/100A Ultra Junction X2

規格書:
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庫存量: 120

庫存：
120 可立即送貨
工廠前置作業時間：
27 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$155.19 HK$155.19
HK$99.71 HK$997.10
HK$93.71 HK$11,245.20
HK$90.26 HK$46,032.60

商品屬性 屬性值 選擇屬性
IXYS
產品類型: MOSFET
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
100 A
30 mOhms
- 30 V, 30 V
2.7 V
180 nC
- 55 C
+ 150 C
1.04 kW
Enhancement
HiPerFET
Tube
品牌: IXYS
配置: Single
下降時間: 7 ns
互導 - 最小值: 40 S
產品類型: MOSFETs
上升時間: 24 ns
系列: 650V Ultra Junction X2
原廠包裝數量: 30
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 83 ns
標準開啟延遲時間: 59 ns
每件重量: 6 g
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所選屬性: 0

規格書

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

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Littelfuse provides a broad portfolio of components for heat pumps, including fuses, TVS diodes, gate drivers, and more. The heat pump market is growing quickly, driven by government initiatives to reduce greenhouse gas emissions and rising energy costs. With inverter-driven motors improving system efficiencies, heat pumps can now be used in a wide range of climates. Learn how Littelfuse technologies make heat pumps safer, more reliable, and more energy efficient. Heat pumps can be used in a wide range of climates due to the inverter-driven motors improving system efficiencies. These components are suitable for various applications such as energy management, security systems, HVAC systems, smoke detectors, and IoT-controlled appliances. Littelfuse offers protect, control, and sense technologies to improve buildings' reliability, safety, and energy efficiency.

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IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).

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Ultra Junction MOSFETs

IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. IXYS Ultra Junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.

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HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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