Infineon Technologies CoolSiC™ 400V G2 Silicon Carbide MOSFETs
Infineon Technologies CoolSiC™ 400V G2 Silicon Carbide MOSFETs are ideally suited for hard- and resonant-switching topologies. The Infineon 400V CoolSiC MOSFETs were specially developed for use in the AC/DC stage of AI server Power Supply Units (PSUs) and are also ideal for applications such as solar and energy storage systems. CoolSiC MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation.
Features
- Ideal for high-frequency switching and synchronous rectification
- Low device capacitances
- Commutation robust fast body diode with low Qfr
- Low RDS(on) dependency on temperature
- Benchmark 4.5V gate threshold voltage VGS(th)
- Best in class switching and conduction losses
- .XT interconnection technology for best‑in‑class thermal performance
- +18V IGBT-compatible driving
- Threshold-free on-state characteristics
- High efficiency for reduced cooling effort
- Long lifetime and high reliability
- Increased power density
- 0V to 18V recommended gate driving voltage range
- Temperature-independent switching losses
- Superior gate oxide reliability
- PG‑TO263‑7 and PG‑HSOF‑8 package options
- -55°C to +175°C operating junction temperature range
- Short-circuit and avalanche robustness, 100% avalanche tested
- Lead-free, Halogen-free, and RoHS compliant
Applications
- Switch-Mode Power Supplies (SMPS)
- Energy storage, Uninterruptible Power Supplies (UPS), and battery formation
- Solar PV inverters
- Class‑D audio
- Motor drives
Application Notes
- AN_1909_PL52_1910_201256 - Isolated Gate-Driving Solutions: Increasing power density and robustness with isolated gate driver ICs
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Development Tools
Infineon Technologies REF-10KW-3LBUCK-SIC400 Reference Board
Enables evaluation of CoolSiC™ MOSFET 400V/650V G2 in TOLL and D2PAK-7 packages.