Infineon Technologies CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltage classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter set, which is used to implement application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

Infineon CoolSiC MOSFETs in discrete packages are ideally suited for both hard- and resonant-switching topologies like Power Factor Correction (PFC) circuits, bi-directional topologies, and DC-DC converters or DC-AC inverters. An excellent immunity against unwanted parasitic turn-on effects creates a benchmark in low dynamic loss, even at zero-volt turn-off voltage in bridge topologies. The Infineon TO- and SMD offerings have Kelvin-source pins for optimized switching performance.

Infineon completes the SiC discrete offering with a range of selected driver IC products, fulfilling the needs of the ultrafast SiC MOSFET switching feature. Together, CoolSiC MOSFETs and EiceDRIVER™ gate driver ICs leverage the advantage of SiC technology: improved efficiency, space and weight savings, part count reduction, and enhanced system reliability.

Technical Features

• Superior gate oxide reliability
• Stable, robust body diode
• Excel in hard-switching topologies e.g. servo drives
• Lowest switching losses at a fast switching speed
• Easy design-in thanks to robustness against parasitic turn-on effects
• Short-circuit rating 3µs
• Excel in soft-switching topologies e.g. EV charging
• Lowest switching losses and easy design-in
• 0V turn-off can be applied

Application Benefits

• CoolSiC MOSFET in Solar Applications
• Doubles the inverter power at the same inverter weight
• Has a significantly less efficiency reduction at high operating temperatures compared to Si-based alternatives
• Offers a power density increase by a factor of up to 2.5
• Shows a maximum efficiency of more than 99%
• CoolSiC MOSFET in Energy Storage Systems
• Cuts losses by up to 50%
• Increases the energy by up to 2% without increasing battery size
• CoolSiC™ MOSFET in Server and Telecom Power
• Cuts losses by up to 30%
• Doubles the density for reaching
• CoolSiC MOSFET in EV Charging
• Cuts charging time in half
• Reduces the component number by 50% yet boosting efficiency
• Lowers the cost of ownership due to higher efficiency
• Reduces the cooling effort

xEV Applications

• Main Inverter Benefits
• Increases battery utilization by 5-10%
• Increases power density for system size reductions of up to 80%
• Lowers conduction losses in light load conditions compared to Si-IGBTs
• Onboard Chargers Benefits
• Can realize smaller bidirectional 3phase chargers
• Helps to downsize passive components thanks to faster switching
• Enhanced efficiency in PFC and DC-DC stage of up to 1%
• HV DC-DC Converters Benefits
• Offers higher switching frequencies
• Enhances power density
• Increases the level of integration