CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltage classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter set, which is used to implement application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

結果: 29
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱
Infineon Technologies 碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package 368庫存量
HK$57.38
HK$40.69
HK$34.94
HK$32.88
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 5.7 V 13 nC - 55 C + 150 C 94 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 309庫存量
HK$75.21
HK$45.70
HK$44.88
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 825庫存量
帶狀裁切
HK$60.66
HK$38.80
HK$35.67
HK$35.10
捲
HK$32.14
最少: 1
倍數: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 26 A 125 mOhms - 7 V, + 20 V 5.1 V 23 nC - 55 C + 175 C 136 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 303庫存量
帶狀裁切
HK$85.65
HK$60.58
HK$50.47
HK$44.96
捲
HK$42.00
最少: 1
倍數: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 36 A 83 mOhms - 7 V, + 20 V 5.1 V 34 nC - 55 C + 175 C 181 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 617庫存量
帶狀裁切
HK$109.16
HK$67.73
HK$63.87
HK$60.75
捲
HK$59.43
最少: 1
倍數: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 47 A 45 mOhms - 7 V, + 20 V 5.1 V 46 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 2,509庫存量
帶狀裁切
HK$131.68
HK$78.42
捲
HK$74.14
最少: 1
倍數: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 56 A 41 mOhms - 7 V, + 20 V 5.1 V 63 nC - 55 C + 175 C 300 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package 6,574庫存量
9,000在途量
帶狀裁切
HK$62.88
HK$42.09
HK$33.87
HK$30.09
捲
HK$26.63
最少: 1
倍數: 1
最大: 1,000
: 1,000
SMD/SMT TO-263-7 1 Channel 1.7 kV 9.8 A 450 mOhms - 10 V, + 20 V 4.5 V 11 nC - 55 C + 175 C 107 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 1,430庫存量
帶狀裁切
HK$51.54
HK$33.78
HK$24.91
HK$22.52
捲
HK$22.52
最少: 1
倍數: 1
最大: 500
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 4.7 A 468 mOhms - 7 V, + 20 V 5.1 V 5.9 nC - 55 C + 175 C 65 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 1,054庫存量
HK$78.75
HK$41.84
HK$38.63
HK$34.85
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 26 A 117 mOhms - 7 V, + 23 V 5.7 V 21 nC - 55 C + 150 C 115 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 3,901庫存量
HK$53.51
HK$30.50
HK$27.95
HK$26.39
HK$25.48
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 13 A 289 mOhms - 7 V, + 23 V 5.7 V 8.5 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 1,731庫存量
HK$118.20
HK$73.49
HK$71.27
HK$70.45
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 650 V 47 A 34 mOhms - 5 V, + 23 V 5.7 V 62 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 361庫存量
HK$88.45
HK$48.09
HK$44.47
HK$44.14
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package 855庫存量
HK$94.28
HK$68.23
HK$56.80
HK$50.55
HK$47.27
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 1.2 kV 36 A 78 mOhms - 7 V, + 23 V 5.7 V 31 nC - 55 C + 150 C 150 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package 960庫存量
HK$79.41
HK$44.96
HK$41.51
HK$38.06
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 1.2 kV 26 A 117 mOhms - 7 V, + 23 V 5.7 V 21 nC - 55 C + 150 C 115 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 3,846庫存量
帶狀裁切
HK$65.84
HK$44.06
HK$35.43
HK$31.48
捲
HK$27.87
最少: 1
倍數: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 18 A 189 mOhms - 7 V, + 20 V 5.1 V 13.4 nC - 55 C + 175 C 107 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 2,469庫存量
帶狀裁切
HK$53.68
HK$28.44
HK$25.40
捲
HK$22.77
最少: 1
倍數: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 13 A 294 mOhms - 7 V, + 20 V 5.1 V 9.4 nC - 55 C + 175 C 83 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 314庫存量
HK$65.43
HK$37.57
HK$34.94
HK$33.62
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 650 V 26 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 150 C 96 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 473庫存量
HK$62.23
HK$32.63
HK$30.00
HK$27.70
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package 5庫存量
25,000在途量
帶狀裁切
HK$49.73
HK$32.55
HK$24.33
HK$20.39
捲
HK$17.67
最少: 1
倍數: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.7 kV 5.2 A 1 Ohms - 10 V, + 20 V 4.5 V 5 nC - 55 C + 175 C 68 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package 186庫存量
2,000預期2/11/2026
帶狀裁切
HK$55.90
HK$36.66
HK$26.96
HK$24.00
捲
HK$21.21
最少: 1
倍數: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.7 kV 7.4 A 650 mOhms - 10 V, + 20 V 4.5 V 8 nC - 55 C + 175 C 88 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 480庫存量
HK$154.37
HK$117.55
HK$97.98
HK$87.30
HK$81.62
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 56 A 40 mOhms - 7 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 227 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 27庫存量
1,200在途量
HK$91.08
HK$64.36
HK$53.68
HK$47.76
HK$44.63
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 36 A 78 mOhms - 7 V, + 23 V 5.7 V 31 nC - 55 C + 150 C 150 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 18庫存量
720在途量
HK$68.06
HK$47.92
HK$38.80
HK$30.50
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 3.5 V 13 nC - 55 C + 175 C 94 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 53庫存量
960預期10/12/2026
HK$58.53
HK$38.31
HK$28.28
HK$25.07
HK$22.19
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 4.7 A 455 mOhms - 7 V, + 23 V 5.7 V 5.3 nC - 55 C + 150 C 60 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package 22庫存量
2,160在途量
HK$67.16
HK$44.96
HK$36.17
HK$32.06
HK$28.44
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 1.2 kV 13 A 220 mOhms - 7 V, + 23 V 5.7 V 8.5 nC - 55 C + 150 C 75 W Enhancement CoolSiC