2000V CoolSiC™ MOSFETs

Infineon Technologies 2000V CoolSiC™ MOSFETs are trench MOSFETs in a TO-247PLUS-4-HCC package. These MOSFETs are designed to deliver increased power density without sacrificing the system's reliability, even under demanding high-voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability using the .XT interconnection technology and enable top efficiencies in various applications. The 2000V MOSFETs feature a benchmark gate threshold voltage of 4.5V and offer very-low switching losses. Typical applications include energy storage systems, EV charging, string inverter, and solar power optimizer.

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說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 安裝風格
封裝/外殼
晶體管極性
通道數
Vds - 漏-源擊穿電壓
Id - C連續漏極電流
Rds On - 漏-源電阻
Vgs - 閘極-源極電壓
Vgs th - 門源門限電壓
Qg - 閘極充電
最低工作溫度
最高工作溫度
Pd - 功率消耗
通道模式
公司名稱
Infineon Technologies 碳化矽MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
規格書
920庫存量
最少： 1
倍數： 1

Through Hole TO-247-4 N-Channel 1 Channel 2 kV 123 A 16.5 mOhms - 10 V, + 23 V 3.5 V 246 nC - 55 C + 150 C 552 W Enhancement CoolSIC
Infineon Technologies 碳化矽MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
規格書
749庫存量
960預期5/11/2026
最少： 1
倍數： 1

Through Hole TO-247-4 N-Channel 1 Channel 2 kV 89 A 33 mOhms - 10 V, + 23 V 3.5 V 137 nC - 55 C + 150 C 576 W Enhancement CoolSIC
Infineon Technologies 碳化矽MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
規格書
283庫存量
480在途量
最少： 1
倍數： 1

Through Hole TO-247-4 N-Channel 1 Channel 2 kV 34 A 98 mOhms - 10 V, + 23 V 3.5 V 64 nC - 55 C + 150 C 267 W Enhancement CoolSIC
Infineon Technologies 碳化矽MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
規格書
95庫存量
1,440在途量
最少： 1
倍數： 1

Through Hole TO-247-4 N-Channel 1 Channel 2 kV 48 A 64 mOhms - 10 V, + 23 V 3.5 V 82 nC - 55 C + 150 C 348 W Enhancement CoolSIC
Infineon Technologies 碳化矽MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
規格書
4,353預期18/2/2027
最少： 1
倍數： 1

Through Hole TO-247-4 N-Channel 1 Channel 2 kV 26 A 131 mOhms - 10 V, + 23 V 3.5 V 55 nC - 55 C + 150 C 217 W Enhancement CoolSIC