Tube 碳化矽MOSFET

結果: 585
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Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology 187庫存量
最少: 1
倍數: 1

Through Hole PG-TO247-4-U07 N-Channel 1 Channel 1.2 kV 201 A 20 mOhms - 10 V, + 25 V 5.1 V 176 nC - 55 C + 175 C 711 W CoolSiC
APC-E 碳化矽MOSFET 650V 50mR, TO-247-4L, Automotive Grade 270庫存量
最少: 1
倍數: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
APC-E 碳化矽MOSFET 1200V 75mR, TO-247-4L, Industrial Grade 268庫存量
最少: 1
倍數: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
APC-E 碳化矽MOSFET 1200V 75mR, TO-247-4L, Automotive Grade 290庫存量
最少: 1
倍數: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
APC-E 碳化矽MOSFET 650V 50mR, TO-247-4L, Industrial Grade 288庫存量
最少: 1
倍數: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
Central Semiconductor 碳化矽MOSFET 1700V Through-Hole MOSFET N-Channel SiC 27庫存量
最少: 1
倍數: 1
Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 26 A 40 mOhms 20 V 2.4 V - 55 C + 175 C 28 W Depletion

onsemi 碳化矽MOSFET SIC MOS TO247-3L 650V 1,292庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC
Infineon Technologies 碳化矽MOSFET SIC_DISCRETE 799庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 36 A 60 mOhms - 7 V, + 23 V 5.7 V 31 nC - 55 C + 175 C 150 mW Enhancement CoolSiC
onsemi 碳化矽MOSFET SIC MOS TO247-4L 650V 428庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi 碳化矽MOSFET SIC MOS TO247-3L 160MOHM 1200V 2,424庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 17 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 119 W Enhancement EliteSiC


Diodes Incorporated 碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO263-7 TUBE 50PCS 35庫存量
最少: 1
倍數: 1

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 38.2 A 90 mOhms - 4 V, + 15 V 3.5 V 54.6 nC - 55 C + 175 C 197 W Enhancement


Diodes Incorporated 碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO263-7 TUBE 50PCS 50庫存量
最少: 1
倍數: 1

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 38.2 A 90 mOhms - 4 V, + 15 V 3.5 V 54.6 nC - 55 C + 175 C 197 W Enhancement


Coherent 碳化矽MOSFET 1200V SIC Mosfet 20mOHm 200C Temp TO247-4 AEC-Q101 139庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 115 A 24.3 mOhms - 20 V, + 20 V 2.8 V 172 nC - 55 C + 200 C 660 W Enhancement
Infineon Technologies 碳化矽MOSFET SIC_DISCRETE 274庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 52 A 35 mOhms - 7 V, + 23 V 4.5 V 59 nC - 55 C + 175 C 228 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SIC_DISCRETE 192庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 33 A 80 mOhms - 7 V, + 20 V 5.7 V 28 nC - 55 C + 175 C 150 mW Enhancement CoolSiC
ROHM Semiconductor 碳化矽MOSFET TO247 750V 105A N-CH SIC 402庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 105 A 16.9 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 312 W Enhancement

onsemi 碳化矽MOSFET SIC MOSFET 900V TO247-4L 2,250庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 900 V 118 A 28 mOhms - 8 V, + 22 V 4.3 V 196 nC - 55 C + 175 C 484 W Enhancement EliteSiC
Infineon Technologies 碳化矽MOSFET SIC_DISCRETE 837庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 52 A 59 mOhms - 7 V, + 20 V 5.7 V 57 nC - 55 C + 175 C 228 W Enhancement CoolSiC
ROHM Semiconductor 碳化矽MOSFET TO247 750V 56A N-CH SIC 635庫存量
最少: 1
倍數: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
Toshiba 碳化矽MOSFET G3 1200V SiC-MOSFET TO-247 45mohm 131庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 40 A 182 mOhms - 10 V, + 25 V 5 V 57 nC - 55 C + 175 C 182 W Enhancement
Toshiba 碳化矽MOSFET G3 1200V SiC-MOSFET TO-247 60mohm 364庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 36 A 182 mOhms - 10 V, + 25 V 5 V 46 nC - 55 C + 175 C 170 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TO247 1.2KV 26A N-CH SIC 833庫存量
最少: 1
倍數: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement

IXYS 碳化矽MOSFET 1200V 80mOhm SiC MOSFET 4,196庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 39 A 80 mOhms - 5 V, + 20 V 2.8 V 95 nC - 55 C + 150 C 179 W Enhancement

onsemi 碳化矽MOSFET SIC MOS TO247-4L 40MOHM 1 1,491庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 58 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 319 W Enhancement EliteSiC

onsemi 碳化矽MOSFET SIC MOS TO247-4L 650V 430庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 33 A 70 mOhms - 18 V, + 18 V 4.3 V 74 nC - 55 C + 175 C 88 W Enhancement EliteSiC