DMWSH120H90SCT7

Diodes Incorporated
621-DMWSH120H90SCT7
DMWSH120H90SCT7

製造商:

說明:
碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO263-7 TUBE 50PCS

壽命週期:
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庫存量: 50

庫存:
50 可立即送貨
工廠前置作業時間:
16 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$78.91 HK$78.91
HK$59.84 HK$598.40
HK$49.81 HK$4,981.00
HK$44.39 HK$22,195.00
HK$41.51 HK$41,510.00

商品屬性 屬性值 選擇屬性
Diodes Incorporated
產品類型: 碳化矽MOSFET
RoHS:  
REACH - SVHC:
SMD/SMT
TO-263-7
N-Channel
1 Channel
1.2 kV
38.2 A
90 mOhms
- 4 V, + 15 V
3.5 V
54.6 nC
- 55 C
+ 175 C
197 W
Enhancement
品牌: Diodes Incorporated
配置: Single
下降時間: 8.5 ns
互導 - 最小值: 5 S
封裝: Tube
產品類型: SiC MOSFETS
上升時間: 18.8 ns
原廠包裝數量: 50
子類別: Transistors
技術: SiC
標準斷開延遲時間: 17.2 ns
標準開啟延遲時間: 9.1 ns
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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

DMWSH120Hx 1200V N-Channel Power MOSFETs

Diodes Incorporated DMWSH120Hx 1200V N-Channel Power MOSFETs are silicon carbide MOSFETs designed to minimize the on-state resistance and maintain excellent switching performance. These MOSFETs feature low input capacitance, up to 100μA zero gate voltage drain current, up to ±250nA gate-source leakage, and a high BVDSS rating for power applications. The DMWSH120Hx MOSFETs operate within the -55°C to 175°C temperature range and comply with the UL 94V-0 flammability classification rating. These power MOSFETs are ideal for EV high-power DC-DC converters, EV charging systems, solar inverters, AC-DC traction inverters, and automotive motor drivers.