Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

結果: 32
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 資格
ROHM Semiconductor 碳化矽MOSFET 1200V 72A 339W SIC 30mOhm TO-247N 352庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement AEC-Q101
ROHM Semiconductor 碳化矽MOSFET 650V 118A 427W SIC 17mOhm TO-247N 360庫存量
最少: 1
倍數: 1

Through Hole TO-247N-3 N-Channel 1 Channel 650 V 118 A 22.1 mOhms - 4 V, + 22 V 5.6 V 172 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor 碳化矽MOSFET 1200V 17A 103W SIC 160mOhm TO-247N 506庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 103 W Enhancement AEC-Q101
ROHM Semiconductor 碳化矽MOSFET N-Ch 1200V SiC 72A 30mOhm TrenchMOS 695庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor 碳化矽MOSFET 1200V 55A 262W SIC 40mOhm TO-247N 467庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor 碳化矽MOSFET 1200V 95A 427W SIC 22mOhm TO-247N 199庫存量
最少: 1
倍數: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 95 A 28.6 mOhms - 4 V, + 22 V 5.6 V 178 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor 碳化矽MOSFET 1200V 24A 134W SIC 105mOhm TO-247N 1,629庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 24 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor 碳化矽MOSFET 650V 70A 262W SIC 30mOhm TO-247N 376庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor 碳化矽MOSFET 650V 39A 165W SIC 60mOhm TO-247N 428庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor 碳化矽MOSFET Nch 1200V 24A SiC TO-247N 169庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 24 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 134 W Enhancement
ROHM Semiconductor 碳化矽MOSFET 650V 30A 134W SIC 80mOhm TO-247N 376庫存量
最少: 1
倍數: 1

Through Hole TO-247N-3 N-Channel 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor 碳化矽MOSFET TO247 650V 39A N-CH SIC 714庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 39 A 60 mOhms - 4 V, + 22 V 5.6 V 58 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TO247 650V 70A N-CH SIC 235庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 70 A 30 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TO247 1.2KV 55A N-CH SIC 61庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 55 A 40 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor 碳化矽MOSFET 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver 529庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 30 A 80 mOhms - 4 V, + 22 V 5.6 V 48 nC - 55 C + 175 C 134 W Enhancement
ROHM Semiconductor 碳化矽MOSFET 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver 87庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 24 A 105 mOhms - 4 V, + 22 V 5.6 V 51 nC - 55 C + 175 C 134 W Enhancement
ROHM Semiconductor 碳化矽MOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOS 1,064庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 31 A 104 mOhms - 4 V, + 22 V 5.6 V 60 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor 碳化矽MOSFET RECT 1.2KV 40A RDL SIC SKY 335庫存量
450預期7/7/2026
最少: 1
倍數: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 40 A 80 mOhms - 6 V, + 22 V 4 V 106 nC + 175 C 262 W Enhancement
ROHM Semiconductor 碳化矽MOSFET 1200V 40A 262W SIC 80mOhm TO-247N 117庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 40 A 80 mOhms - 6 V, + 22 V 1.6 V 106 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor 碳化矽MOSFET 1700V 3.7A N-MOSFET Silicon Carbide SiC 1,460庫存量
最少: 1
倍數: 1

Through Hole TO-3PFM-3 N-Channel 1 Channel 1.7 kV 3.7 A 1.5 Ohms - 6 V, + 22 V 4 V 14 nC - 55 C + 175 C 35 W Enhancement
ROHM Semiconductor 碳化矽MOSFET Nch 1200V 95A SiC TO-247N 246庫存量
90預期11/3/2026
最少: 1
倍數: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 95 A 28.6 mOhms - 4 V, + 22 V 5.6 V 178 nC - 55 C + 175 C 427 W Enhancement
ROHM Semiconductor 碳化矽MOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS 102庫存量
最少: 1
倍數: 1
Through Hole TO-247-3 N-Channel 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor 碳化矽MOSFET N-Ch 1200V SiC 55A 40mOhm TrenchMOS 322庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor 碳化矽MOSFET N-Ch 650V SiC 39A 60mOhm TrenchMOS 759庫存量
最少: 1
倍數: 1
Through Hole TO-247-3 N-Channel 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement
ROHM Semiconductor 碳化矽MOSFET N-Ch 650V 30A Silicon Carbide SiC 939庫存量
最少: 1
倍數: 1

Through Hole TO-247N-3 N-Channel 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement