SCT3060ARC14

ROHM Semiconductor
755-SCT3060ARC14
SCT3060ARC14

製造商：

說明：
碳化矽MOSFET TO247 650V 39A N-CH SIC

壽命週期:
NRND:
不建議用於新設計。
規格書:
ECAD模型:
下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 714

庫存：
714 可立即送貨
工廠前置作業時間：
30 週 工廠預計生產時間數量大於所顯示的數量。
數量超過714會受到最小訂單要求的限制。
此產品已報告長備貨期。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$177.63 HK$177.63
HK$140.64 HK$1,406.40

相似產品

ROHM Semiconductor SCT3080ARC15
ROHM Semiconductor
碳化矽MOSFET Transistor SiC MOSFET 650V 80m 3rd Gen TO-247-4L
與當前零件比較

商品屬性 屬性值 選擇屬性
ROHM Semiconductor
產品類型: 碳化矽MOSFET
RoHS:  
REACH - SVHC:
Through Hole
TO-247-4
N-Channel
1 Channel
650 V
39 A
60 mOhms
- 4 V, + 22 V
5.6 V
58 nC
- 55 C
+ 175 C
165 W
Enhancement
品牌: ROHM Semiconductor
配置: Single
組裝國家: Not Available
擴散國: Not Available
原產國: CN
下降時間: 13 ns
互導 - 最小值: 4.9 S
封裝: Tube
產品類型: SiC MOSFETS
上升時間: 14 ns
系列: SCT3x
原廠包裝數量: 240
子類別: Transistors
技術: SiC
標準斷開延遲時間: 17 ns
標準開啟延遲時間: 5 ns
零件號別名: SCT3060AR
每件重量: 6 g
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所選屬性: 0

規格書

EOL

Specification Sheets

此功能需要啟用JavaScript。

CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

SCT3x 3rd Generation SiC Trench MOSFETs

ROHM Semiconductor SCT3x series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This design results in significantly lower switching loss and faster switching speeds, improving operational efficiency while reducing power loss in a variety of equipment. ROHM Semiconductor SCT3x includes 650V and 1200V variants for broad applicability.

N-Channel SiC Power MOSFETs

ROHM Semiconductor N-Channel Silicon Carbide (SiC) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. Their low ON resistance and compact chip size ensure low capacitance and gate charge. These ROHM SiC Power MOSFETs exhibit minimal ON-resistance increases and provides greater package miniaturization. This provides more energy savings than standard Si devices, in which the ON-resistance can more than double with increased temperature.

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