HiPerFET 系列 MOSFET

結果: 105
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
IXYS MOSFET DiscMSFT NChUltrJnctX3Class TO-220AB/FP 3,528庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 72 A 20 mOhms - 20 V, 20 V 2.5 V 55 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFET 120 Amps 200V 0.022 Rds 391庫存量
1,450在途量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 120 A 22 mOhms - 20 V, 20 V 5 V 152 nC - 55 C + 175 C 714 W Enhancement HiPerFET Tube
IXYS MOSFET DiscMSFT NChUltrJnctn X3Class TO-252D 1,956庫存量
最少: 1
倍數: 1

Si SMD/SMT TO-252-3 N-Channel 1 Channel 300 V 26 A 66 mOhms - 20 V, 20 V 2.5 V 22 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube
IXYS MOSFET TO252 200V 36A N-CH X3CLASS 1,798庫存量
最少: 1
倍數: 1

Si SMD/SMT TO-252-3 N-Channel 1 Channel 200 V 36 A 38 mOhms - 20 V, 20 V 2.5 V 21 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube
IXYS MOSFET DiscMSFT NChUltrJnctn X3Class TO-252D 661庫存量
最少: 1
倍數: 1

Si SMD/SMT TO-252-3 N-Channel 1 Channel 250 V 30 A 60 mOhms - 20 V, 20 V 2.5 V 21 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube
IXYS MOSFET TO220 300V 56A N-CH X3CLASS 519庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 56 A 27 mOhms - 20 V, 20 V 2.5 V 56 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFET DiscMSFT NChUltrJnctX3Class TO-220AB/FP 286庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 250 V 30 A 60 mOhms - 20 V, 20 V 2.5 V 21 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube

IXYS MOSFET 6 Amps 1200V 2.4 Rds 284庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 6 A 2.6 Ohms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube
IXYS MOSFET DiscMSFT NChUltrJnctn X3Class TO-263D2 547庫存量
最少: 1
倍數: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 250 V 30 A 60 mOhms - 20 V, 20 V 2.5 V 21 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube

IXYS MOSFET 1KV 6A 226庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 6 A 2 Ohms - 20 V, 20 V 4.5 V 88 nC - 55 C + 150 C 180 W Enhancement HyperFET Tube

IXYS MOSFET HiPERFET Id26 BVdass500 4,085庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 26 A 230 mOhms - 30 V, 30 V 3 V 60 nC - 55 C + 150 C 400 W Enhancement HiPerFET Tube
IXYS MOSFET DiscMSFT NChUltrJnctn X3Class TO-263D2 2,204庫存量
最少: 1
倍數: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 300 V 26 A 66 mOhms - 20 V, 20 V 2.5 V 22 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube

IXYS MOSFET 10 Amps 1000V 337庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 10 A 1.4 Ohms - 30 V, 30 V 6.5 V 56 nC - 55 C + 150 C 380 W Enhancement HiPerFET Tube

IXYS MOSFET 12 Amps 1000V 1,382庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 12 A 1.05 Ohms - 20 V, 20 V 3.5 V 80 nC - 55 C + 150 C 463 W Enhancement HiPerFET Tube

IXYS MOSFET Polar3 HiPerFET Power MOSFET 1,317庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 26 A 240 mOhms - 30 V, 30 V 5 V 42 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFET PolarHT HiperFET 100v, 170A 1,398庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 100 V 170 A 9 mOhms - 20 V, 20 V 5 V 198 nC - 55 C + 175 C 714 W Enhancement HiPerFET Tube
IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/24A 130庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 24 A 440 mOhms - 30 V, 30 V 3.5 V 140 nC - 55 C + 150 C 1 kW Enhancement HiPerFET Tube
IXYS MOSFET 500V 44A 483庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 44 A 140 mOhms - 30 V, 30 V 3 V 98 nC - 55 C + 150 C 650 W Enhancement HiPerFET Tube
IXYS MOSFET 3 Amps 1200V 4.50 Rds 479庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms - 20 V, 20 V 5 V 39 nC - 55 C + 150 C 200 W Enhancement HiPerFET Tube

IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/24A 180庫存量
120預期10/4/2026
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 24 A 440 mOhms - 30 V, 30 V 3.5 V 140 nC - 55 C + 150 C 1 kW Enhancement HiPerFET Tube
IXYS MOSFET DiscMSFT NChUltrJnctn X3Class TO-263D2 86庫存量
最少: 1
倍數: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 36 A 45 mOhms - 20 V, 20 V 2.5 V 21 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube
IXYS MOSFET TO263 300V 38A N-CH X3CLASS 39庫存量
最少: 1
倍數: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 300 V 38 A 50 mOhms - 20 V, 20 V 2.5 V 35 nC - 55 C + 150 C 240 W Enhancement HiPerFET Tube
IXYS MOSFET 3 Amps 1200V 4.5 Rds 26庫存量
最少: 1
倍數: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms - 20 V, 20 V 2.5 V 39 nC - 55 C + 150 C 200 W Enhancement HiPerFET Tube
IXYS MOSFET TO263 300V 56A N-CH X3CLASS 44庫存量
300預期28/8/2026
最少: 1
倍數: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 300 V 56 A 27 mOhms - 20 V, 20 V 2.5 V 56 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube

IXYS MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds 145庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 12 A 900 mOhms - 30 V, 30 V 6.5 V 56 nC - 55 C + 150 C 380 W Enhancement HiPerFET Tube