電動車輛充電解決方案

Littelfuse電動車輛(EV)充電解決方案允許設計人員選擇理想解決方案以確保EV充電單元的功能和安全。非車載EV充電解決站可在極熱、極冷、雨、雪和雷暴天氣的惡劣環境中使用。Littelfuse產品可防護這些危險,盡量減低故障風險。

結果: 95
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
IXYS MOSFET 250V UltraJunc X3 Pwr MOSFET 939庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 250 V 240 A 4.1 mOhms - 20 V, 20 V 2.5 V 345 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube

IXYS MOSFET 850V Ultra Junction X-Class Pwr MOSFET 297庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 850 V 20 A 330 mOhms - 30 V, 30 V 3.5 V 63 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube

IXYS MOSFET 250V/80A Ultra Junct ion X3-Class MOSFET 396庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 80 A 16 mOhms - 20 V, 20 V 2.5 V 83 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFET MOSFET 650V/22A Ultra Junction X2 739庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 160 mOhms - 30 V, 30 V 2.7 V 38 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube

IXYS MOSFET N-Ch 200V Enh FET 200Vdgr 300A 4mOhm 260庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 200 V 300 A 4 mOhms - 20 V, 20 V 2.5 V 375 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 650V/60A Ultra Junction X2 889庫存量
最少: 1
倍數: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 60 A 52 mOhms - 30 V, 30 V 2.7 V 107 nC - 55 C + 150 C 780 W Enhancement HiPerFET Tube
IXYS MOSFET N-Ch 200V Enh FET 200Vdgr 300A 4mOhm 265庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 300 A 4 mOhms - 20 V, 20 V 2.5 V 375 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFET 1000V 26A TO-268HV Power MOSFET 140庫存量
最少: 1
倍數: 1

Si SMD/SMT TO-268-3 N-Channel 1 Channel 1 kV 8 A 320 mOhms - 30 V, 30 V 3.5 V 113 nC - 55 C + 150 C 860 W Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 650V/34A Ultra Junction X2 670庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 34 A 105 mOhms - 30 V, 30 V 2.7 V 56 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFET 850V Ultra Junction X-Class Pwr MOSFET 278庫存量
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 850 V 50 A 105 mOhms - 30 V, 30 V 3.5 V 152 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 650V/46A Ultra Junction X2 403庫存量
最少: 1
倍數: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 76 mOhms - 30 V, 30 V 2.7 V 75 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube
IXYS MOSFET TO264 650V 102A N-CH X2CLASS 251庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 650 V 102 A 30 mOhms - 30 V, 30 V 3 V 152 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube
IXYS MOSFET TO220 650V 8A N-CH X2CLASS 28庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 8 A 500 mOhms - 30 V, 30 V 3 V 12 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube
IXYS MOSFET 200V/90A X3-Class HiPerFET 269庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 90 A 12.8 mOhms - 20 V, 20 V 2.5 V 78 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFET MOSFET 650V/150A Ultra Junction X2 51庫存量
最少: 1
倍數: 1

Si Through Hole PLUS-264-3 N-Channel 1 Channel 650 V 150 A 17 mOhms - 30 V, 30 V 2.7 V 430 nC - 55 C + 150 C 1.56 kW Enhancement HiPerFET Tube
IXYS MOSFET 850V Ultra Junction X-Class Pwr MOSFET 238庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 850 V 20 A 330 mOhms - 30 V, 30 V 3.5 V 63 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFET 1000V 52A PLUS247 Power MOSFET 195庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 1 kV 52 A 125 mOhms - 30 V, 30 V 3.5 V 245 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFET 650V/80A TO-247-4L 509庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 80 A 38 mOhms - 30 V, 30 V 3.5 V 140 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET 1000V 32A TO-268HV Power MOSFET 257庫存量
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1 kV 32 A 220 mOhms - 30 V, 30 V 3.5 V 130 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET 1000V 32A TO-264 Power MOSFET 255庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 32 A 220 mOhms - 30 V, 30 V 3.5 V 130 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET TO264 150V 400A N-CH 4CLASS 1,409庫存量
375預期17/4/2026
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 400 A 3.1 mOhms - 20 V, 20 V 4.5 V 430 nC - 55 C + 175 C 1.5 kW Enhancement HiPerFET Tube

IXYS MOSFET 250V/170A Ultra Junc tion X3-Class MOSFE 139庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 170 A 6.1 mOhms - 20 V, 20 V 2.5 V 190 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube
IXYS MOSFET 1000V 32A TO-247 Power MOSFET 494庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 32 A 220 mOhms - 30 V, 30 V 3.5 V 130 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFET 850V Ultra Junction X-Class Pwr MOSFET 270庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 850 V 50 A 105 mOhms - 30 V, 30 V 3.5 V 152 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 650V/80A Ultra Junction X2 851庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 80 A 40 mOhms - 30 V, 30 V 2.7 V 143 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube