PolarP3™ HiPerFET™ Power MOSFETs

IXYS PolarP3™ HiPerFET™ Power MOSFETs are the latest addition to the benchmark high-performance Polar-Series for the product portfolio between 300V, 500V, and 600V. The high Figure of Merit (FOM), which is the multiplication of Qg and RDS(on), provides an excellent alternative to weaker super junction technologies. These PolarP3 HiPerFETs demonstrate up to a 12% reduction in on-state resistance (Rdson), a 14 percent reduction in gate charge (Qg) and as high as a 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing the total power density of the device.

結果: 9
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
IXYS MOSFET Polar3 HiPerFET Power MOSFET 286庫存量
最少: 1
倍數: 1

Si Through Hole TO-3P-3 N-Channel 500 V 26 A 240 mOhms HiPerFET Tube
IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 176庫存量
最少: 1
倍數: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 300 V 94 A 36 mOhms - 20 V, 20 V 3 V 102 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube
IXYS MOSFET Polar3 HiPerFET Power MOSFET 1,133庫存量
最少: 1
倍數: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 500 V 20 A 300 mOhms - 30 V, 30 V 5 V 36 nC - 55 C + 150 C 380 W Enhancement HiPerFET Tube
IXYS MOSFET 600V 22A 0.36Ohm PolarP3 Power MOSFET 840工廠有庫存
最少: 1
倍數: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 600 V 22 A 360 mOhms - 30 V, 30 V 5 V 38 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET 420工廠有庫存
最少: 300
倍數: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 600 V 28 A 260 mOhms - 30 V, 30 V 5 V 50 nC - 55 C + 150 C 695 W Enhancement HiPerFET Tube
IXYS MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET 420工廠有庫存
最少: 300
倍數: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 600 V 50 A 145 mOhms - 30 V, 30 V 5 V 94 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube
IXYS MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET 780工廠有庫存
最少: 1
倍數: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 500 V 60 A 100 mOhms - 30 V, 30 V 5 V 96 nC 1.04 mW HiPerFET Tube
IXYS MOSFET Polar3 HiPerFET Power MOSFET 無庫存前置作業時間 26 週
最少: 300
倍數: 30

Si Through Hole TO-3P-3 N-Channel 500 V 34 A 180 mOhms HiPerFET Tube
IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 無庫存前置作業時間 26 週
最少: 1
倍數: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 500 V 50 A 125 mOhms - 30 V, 30 V 5 V 85 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube