|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R004M2HXUMA1
- Infineon Technologies
-
1:
HK$599.81
-
1,367庫存量
-
1,500在途量
-
新產品
|
Mouser 元件編號
726-IMCQ120R004M2HXU
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
1,367庫存量
1,500在途量
在途量:
750 預期3/9/2026
750 預期15/10/2026
|
|
|
HK$599.81
|
|
|
HK$521.07
|
|
|
HK$469.61
|
|
|
HK$435.99
|
|
|
HK$435.99
|
|
最少: 1
倍數: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
403 A
|
10.4 mOhms
|
- 10 V, 25 V
|
5.1 V
|
348 nC
|
- 55 C
|
+ 175 C
|
1.5 kW
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R018CM2HXKSA1
- Infineon Technologies
-
1:
HK$163.33
-
188庫存量
-
新產品
|
Mouser 元件編號
726-IMY120R018CM2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
188庫存量
|
|
|
HK$163.33
|
|
|
HK$124.37
|
|
|
HK$103.65
|
|
|
HK$89.35
|
|
|
HK$78.34
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
23 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
73 nC
|
- 40 C
|
+ 175 C
|
356 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R036AM2HXKSA1
- Infineon Technologies
-
1:
HK$117.14
-
215庫存量
-
新產品
|
Mouser 元件編號
726-IMY120R036AM2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
215庫存量
|
|
|
HK$117.14
|
|
|
HK$89.19
|
|
|
HK$74.31
|
|
|
HK$66.25
|
|
|
HK$61.90
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
44 A
|
45 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
37 nC
|
- 40 C
|
+ 175 C
|
171 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R036CM2HXKSA1
- Infineon Technologies
-
1:
HK$105.54
-
182庫存量
-
新產品
|
Mouser 元件編號
726-IMY120R036CM2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
182庫存量
|
|
|
HK$105.54
|
|
|
HK$58.44
|
|
|
HK$55.65
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
44 A
|
45 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
37 nC
|
- 40 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
- IMZC120R007M2HXKSA1
- Infineon Technologies
-
1:
HK$340.64
-
5庫存量
-
960在途量
-
新產品
|
Mouser 元件編號
726-IMZC120R007M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
|
|
5庫存量
960在途量
|
|
|
HK$340.64
|
|
|
HK$259.09
|
|
|
HK$238.22
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
PG-TO247-4-U07
|
N-Channel
|
1 Channel
|
1.2 kV
|
201 A
|
20 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
176 nC
|
- 55 C
|
+ 175 C
|
711 W
|
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
- IMCQ120R010M2HXTMA1
- Infineon Technologies
-
1:
HK$247.09
-
464庫存量
-
3,000預期10/9/2026
-
新產品
|
Mouser 元件編號
726-IMCQ120R010M2HXT
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
|
|
464庫存量
3,000預期10/9/2026
|
|
|
HK$247.09
|
|
|
HK$180.59
|
|
|
HK$175.00
|
|
|
HK$165.80
|
|
最少: 1
倍數: 1
:
750
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R012M2HHXUMA1
- Infineon Technologies
-
1:
HK$356.01
-
586庫存量
-
新產品
|
Mouser 元件編號
726-IMSQ120R012M2HHX
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
586庫存量
|
|
|
HK$356.01
|
|
|
HK$276.36
|
|
|
HK$258.03
|
|
|
HK$258.03
|
|
最少: 1
倍數: 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R026M2HXTMA1
- Infineon Technologies
-
1:
HK$117.71
-
1,798庫存量
-
新產品
|
Mouser 元件編號
726-IMCQ120R026M2HXT
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
1,798庫存量
|
|
|
HK$117.71
|
|
|
HK$82.36
|
|
|
HK$67.73
|
|
|
HK$66.42
|
|
|
HK$63.29
|
|
最少: 1
倍數: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
82 A
|
67 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
63.4 nC
|
- 55 C
|
+ 175 C
|
405 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R034M2HXTMA1
- Infineon Technologies
-
1:
HK$98.06
-
1,440庫存量
-
新產品
|
Mouser 元件編號
726-IMCQ120R034M2HXT
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
1,440庫存量
|
|
|
HK$98.06
|
|
|
HK$66.91
|
|
|
HK$57.21
|
|
|
HK$51.70
|
|
|
HK$49.65
|
|
最少: 1
倍數: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
64 A
|
89 mOhms
|
- 10 V, + 25 C
|
5.1 V
|
48.7 nC
|
- 55 C
|
+ 175 C
|
326 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R053M2HXTMA1
- Infineon Technologies
-
1:
HK$77.76
-
330庫存量
-
750預期15/10/2026
-
新產品
|
Mouser 元件編號
726-IMCQ120R053M2HXT
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
330庫存量
750預期15/10/2026
|
|
|
HK$77.76
|
|
|
HK$51.21
|
|
|
HK$39.46
|
|
|
HK$36.83
|
|
|
HK$36.83
|
|
最少: 1
倍數: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
43 A
|
138 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
32.8 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R078M2HXTMA1
- Infineon Technologies
-
1:
HK$68.23
-
856庫存量
-
新產品
|
Mouser 元件編號
726-IMCQ120R078M2HXT
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
856庫存量
|
|
|
HK$68.23
|
|
|
HK$46.36
|
|
|
HK$33.95
|
|
|
HK$33.13
|
|
|
HK$30.99
|
|
最少: 1
倍數: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
31 A
|
205 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
23.2 nC
|
- 55 C
|
+ 175 C
|
176 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R026M2HHXUMA1
- Infineon Technologies
-
1:
HK$196.29
-
692庫存量
-
新產品
|
Mouser 元件編號
726-IMSQ120R026M2HHX
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
692庫存量
|
|
|
HK$196.29
|
|
|
HK$141.55
|
|
|
HK$130.78
|
|
|
HK$122.15
|
|
|
HK$122.15
|
|
最少: 1
倍數: 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R040M2HHXUMA1
- Infineon Technologies
-
1:
HK$155.52
-
660庫存量
-
新產品
|
Mouser 元件編號
726-IMSQ120R040M2HHX
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
660庫存量
|
|
|
HK$155.52
|
|
|
HK$110.64
|
|
|
HK$97.16
|
|
|
HK$90.67
|
|
|
HK$90.67
|
|
最少: 1
倍數: 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R053M2HHXUMA1
- Infineon Technologies
-
1:
HK$131.52
-
199庫存量
-
750預期19/11/2026
-
新產品
|
Mouser 元件編號
726-IMSQ120R053M2HHX
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
199庫存量
750預期19/11/2026
|
|
|
HK$131.52
|
|
|
HK$92.64
|
|
|
HK$87.79
|
|
|
HK$73.08
|
|
|
HK$73.08
|
|
最少: 1
倍數: 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R012M2HXKSA1
- Infineon Technologies
-
1:
HK$218.90
-
115庫存量
-
240預期17/9/2026
-
新產品
|
Mouser 元件編號
726-IMZA120R012M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
115庫存量
240預期17/9/2026
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
|
16 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
480 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R022M2HXKSA1
- Infineon Technologies
-
1:
HK$141.71
-
341庫存量
-
新產品
|
Mouser 元件編號
726-IMZA120R022M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
341庫存量
|
|
|
HK$141.71
|
|
|
HK$87.38
|
|
|
HK$80.47
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
29 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R040M2HXKSA1
- Infineon Technologies
-
1:
HK$98.15
-
352庫存量
-
新產品
|
Mouser 元件編號
726-IMZA120R040M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
352庫存量
|
|
|
HK$98.15
|
|
|
HK$58.61
|
|
|
HK$49.98
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
48 A
|
51 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
39 nC
|
- 55 C
|
+ 175 C
|
218 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
- IMZC120R012M2HXKSA1
- Infineon Technologies
-
1:
HK$218.90
-
625庫存量
-
240預期12/11/2026
-
新產品
|
Mouser 元件編號
726-IMZC120R012M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
|
|
625庫存量
240預期12/11/2026
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
12 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
- IMZC120R017M2HXKSA1
- Infineon Technologies
-
1:
HK$171.63
-
579庫存量
-
新產品
|
Mouser 元件編號
726-IMZC120R017M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
|
|
579庫存量
|
|
|
HK$171.63
|
|
|
HK$123.96
|
|
|
HK$107.68
|
|
|
HK$102.83
|
|
|
報價
|
|
|
報價
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
97 A
|
17 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
- IMZC120R022M2HXKSA1
- Infineon Technologies
-
1:
HK$152.32
-
1,397庫存量
-
新產品
|
Mouser 元件編號
726-IMZC120R022M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
|
|
1,397庫存量
|
|
|
HK$152.32
|
|
|
HK$104.89
|
|
|
HK$90.58
|
|
|
HK$84.42
|
|
|
HK$80.47
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
22 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
- IMZC120R026M2HXKSA1
- Infineon Technologies
-
1:
HK$126.59
-
250庫存量
-
新產品
|
Mouser 元件編號
726-IMZC120R026M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
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250庫存量
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HK$126.59
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HK$89.76
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HK$76.12
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HK$66.91
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最少: 1
倍數: 1
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|
Through Hole
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TO-247-4
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N-Channel
|
1 Channel
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1.2 kV
|
69 A
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25 mOhms
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- 10 V, + 25 V
|
5.1 V
|
124 nC
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- 55 C
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+ 175 C
|
289 W
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Enhancement
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CoolSiC
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碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
- IMZC120R034M2HXKSA1
- Infineon Technologies
-
1:
HK$103.08
-
961庫存量
-
新產品
|
Mouser 元件編號
726-IMZC120R034M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
|
|
961庫存量
|
|
|
HK$103.08
|
|
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HK$61.90
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HK$53.27
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最少: 1
倍數: 1
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|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
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|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
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|
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碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
- IMZC120R053M2HXKSA1
- Infineon Technologies
-
1:
HK$83.52
-
687庫存量
-
新產品
|
Mouser 元件編號
726-IMZC120R053M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
|
|
687庫存量
|
|
|
HK$83.52
|
|
|
HK$49.24
|
|
|
HK$41.68
|
|
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HK$41.59
|
|
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HK$40.44
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
38 A
|
53 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
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|
|
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碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
HK$296.50
-
933庫存量
-
1,000預期15/10/2026
|
Mouser 元件編號
726-IMBG120R008M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
933庫存量
1,000預期15/10/2026
|
|
|
HK$296.50
|
|
|
HK$222.60
|
|
|
HK$222.52
|
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HK$210.60
|
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HK$207.88
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|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
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TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
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|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
HK$158.15
-
3,134庫存量
|
Mouser 元件編號
726-IMBG120R017M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3,134庫存量
|
|
|
HK$158.15
|
|
|
HK$112.70
|
|
|
HK$100.45
|
|
|
HK$99.71
|
|
|
HK$92.64
|
|
最少: 1
倍數: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|