CoolSiC™ 1200V G2碳化矽MOSFET

英飛凌 CoolSiC™ 1200V G2碳化矽MOSFET是電力電子應用的高性能解決方案。這些MOSFET展現出優異的電氣特性和極低的切換損耗,能達到高效率的運作。該1200V G2 MOSFET設計可用於過載條件,支援最高200°C的運作,並可承受長達2µs的短路。這些裝置採用4.2V基準閘極閾值電壓 (VG(th)),確保了精確的控制。

結果: 45
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Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 1,367庫存量
1,500在途量
最少: 1
倍數: 1
: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 403 A 10.4 mOhms - 10 V, 25 V 5.1 V 348 nC - 55 C + 175 C 1.5 kW Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode 188庫存量
最少: 1
倍數: 1

Through Hole PG-TO-247-4 N-Channel 1 Channel 1.2 kV 80 A 23 mOhms - 10 V, + 25 V 5.1 V 73 nC - 40 C + 175 C 356 W Enhancement
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode 215庫存量
最少: 1
倍數: 1

Through Hole PG-TO-247-4 N-Channel 1 Channel 1.2 kV 44 A 45 mOhms - 10 V, + 25 V 5.1 V 37 nC - 40 C + 175 C 171 W Enhancement
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode 182庫存量
最少: 1
倍數: 1

Through Hole PG-TO-247-4 N-Channel 1 Channel 1.2 kV 44 A 45 mOhms - 10 V, + 25 V 5.1 V 37 nC - 40 C + 175 C 250 W Enhancement
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology 5庫存量
960在途量
最少: 1
倍數: 1

Through Hole PG-TO247-4-U07 N-Channel 1 Channel 1.2 kV 201 A 20 mOhms - 10 V, + 25 V 5.1 V 176 nC - 55 C + 175 C 711 W CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling 464庫存量
3,000預期10/9/2026
最少: 1
倍數: 1
: 750

CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology 586庫存量
最少: 1
倍數: 1
: 750

1.2 kV
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 1,798庫存量
最少: 1
倍數: 1
: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 82 A 67 mOhms - 10 V, + 25 V 5.1 V 63.4 nC - 55 C + 175 C 405 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 1,440庫存量
最少: 1
倍數: 1
: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 64 A 89 mOhms - 10 V, + 25 C 5.1 V 48.7 nC - 55 C + 175 C 326 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 330庫存量
750預期15/10/2026
最少: 1
倍數: 1
: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 43 A 138 mOhms - 10 V, + 25 V 5.1 V 32.8 nC - 55 C + 175 C 234 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 856庫存量
最少: 1
倍數: 1
: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 31 A 205 mOhms - 10 V, + 25 V 5.1 V 23.2 nC - 55 C + 175 C 176 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology 692庫存量
最少: 1
倍數: 1
: 750

1.2 kV
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology 660庫存量
最少: 1
倍數: 1
: 750

1.2 kV
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology 199庫存量
750預期19/11/2026
最少: 1
倍數: 1
: 750

1.2 kV
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 115庫存量
240預期17/9/2026
最少: 1
倍數: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 16 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C 480 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 341庫存量
最少: 1
倍數: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 80 A 29 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 352庫存量
最少: 1
倍數: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 48 A 51 mOhms - 10 V, + 25 V 5.1 V 39 nC - 55 C + 175 C 218 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2 625庫存量
240預期12/11/2026
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 129 A 12 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2 579庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 97 A 17 mOhms - 10 V, + 25 V 5.1 V 89 nC - 55 C + 175 C 382 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2 1,397庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 80 A 22 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2 250庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 69 A 25 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C 289 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2 961庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 55 A - 10 V, + 25 V 5.1 V 45 nC - 55 C + 175 C 244 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2 687庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 38 A 53 mOhms - 10 V, + 25 V 5.1 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package 933庫存量
1,000預期15/10/2026
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 189 A 7.7 mOhms - 7 V, + 20 V 5.1 V 195 nC - 55 C + 175 C 800 W Enhancement
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package 3,134庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 107 A 17.1 mOhms - 7 V, + 20 V 5.1 V 89 nC - 55 C + 175 C 470 W Enhancement