Qorvo QPA2310 C-Band 50W GaN Power Amplifier
Qorvo QPA2310 C-Band 50W GaN (Gallium Nitride) Power Amplifier operates from 5GHz to 6GHz and delivers a high power added efficiency (PAE) of 53%. This device has a 50V drain voltage, a 300mA quiescent drain current, and provides a power gain of up to 23dB. The QPA2310 is internally matched and requires no additional external RF components, enabling designers and system integrators to maximize design by reducing size and weight while offering better performance.
Built on Qorvo's patented QGaN25HV wafer process, the QPA2310 is offered in a compact 7.0mm x 7.0mm QFN package. The integrated Surface Mount Technology (SMT) package design enables designers to manufacture at a lower cost compared to die or bolt-down flange-package alternatives.
Features
- 5GHz to 6GHz frequency range (C-band)
- 53% power added efficiency (PAE)
- 50W output power at saturation (PSAT)
- 23dB power gain
- 50V drain voltage (VD)
- 300mA quiescent drain current (IDQ)
- 7.0mm x 7.0mm x 0.82mm QFN package
- Halogen-free, lead-free, and RoHS compliant
Applications
- Electronic warfare
- Radar
Press Releases
Development Tools
Qorvo QPA2310EVB Evaluation Board
Demonstration and development platform for the QPA2310 C-Band 50W GaN Power Amplifier.
Related Products
Qorvo QPA2309 C-Band 100W GaN Power Amplifier
100W 5GHz to 6GHz C-band amplifier delivering a power gain of 22dB with 52% power added efficiency.
發佈日期: 2021-04-22
| 更新日期: 2022-03-11