Qorvo QPA2309 C-Band 100W GaN Power Amplifier
Qorvo QPA2309 C-Band 100W GaN (Gallium Nitride) Power Amplifier operates from 5GHz to 6GHz and delivers a high power added efficiency (PAE) of 52%. This device has a 50V drain voltage, a 600mA quiescent drain current, and provides a power gain of up to 22dB. The QPA2309 is internally matched and requires no additional external RF components, enabling designers and system integrators to maximize design by reducing size and weight while offering better performance.
Built on Qorvo's patented QGaN25HV wafer process, the QPA2309 is offered in a compact 7.0mm x 7.0mm QFN package. The integrated Surface Mount Technology (SMT) package design enables designers to manufacture at a lower cost compared to die or bolt-down flange-package alternatives.
Features
- 5GHz to 6GHz frequency range (C-band)
- 52% power added efficiency (PAE)
- 100W output power at saturation (PSAT)
- 22dB power gain
- 50V drain voltage (VD)
- 600mA quiescent drain current (IDQ)
- 7.0mm x 7.0mm x 0.82mm QFN24 package
- Halogen-free, lead-free, and RoHS compliant
Applications
- Electronic warfare
- Radar
Press Releases
Development Tools
Qorvo QPA2309EVB Evaluation Board
Demonstration and development platform for the QPA2309 C-Band 100W GaN Power Amplifier
Related Products
Qorvo QPA2310 C-Band 50W GaN Power Amplifier
50W 5GHz to 6GHz C-band amplifier delivering a power gain of 23dB with 53% power added efficiency.
發佈日期: 2021-04-22
| 更新日期: 2022-03-11