Vishay / Siliconix SiA906EDJ Dual N-Channel MOSFET
Vishay Siliconix SiA906EDJ Dual N-Channel MOSFET is designed to save space and increase power efficiency in portable electronics. It features the industry's lowest on-resistance for 20V (12V VGS) devices at 4.5V gate drives in the 2x2mm footprint area.
The SiA906EDJ is optimized for load switches for portable applications and high-frequency DC/DC converters. For these applications, the SiA906EDJ offers extremely low on-resistance of 34mΩ (4.5V), 37mΩ (3.7V), and 45mΩ (2.5V), and built-in ESD protection of 2000V.
Its on-resistance at 2.5V is 11.7% lower than the closest competing 8V VGS device — while providing a higher (G-S) guard band — and 15.1% lower than the closest competing device with a 12V VGS.
The device's industry-low on-resistance allows designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times. By integrating two MOSFETs into one compact package, the dual Vishay Siliconix SiA906EDJ simplifies designs, lowers the overall component count, and saves critical PCB space.
Features
- TrenchFET power MOSFET
- Thermally enhanced PowerPAK SC-70 package
- Small footprint area
- Low on-resistance
- 560V typical ESD protection
- 100% Rg tested
Applications
- Load switch for portable applications
- High-frequency DC/DC converter