ROHM Semiconductor RFxDNZ Super Fast Recovery Diodes
ROHM Semiconductor RFxDNZ Super Fast Recovery Diodes are cathode common dual type diodes featuring low forward voltage and low switching loss. These recovery diodes include silicon epitaxial planar type construction. The RFxDNZ recovery diodes are stored at -55°C to 150°C temperature range. These fast recovery diodes operate at 150°C junction temperature and 10μA reverse current. The RFxDNZ super-fast recovery diodes are ideal for use in general rectification.
Features
- Low forward voltage
- Silicon epitaxial planar type construction
- Low switching loss
- Cathode common dual type
Specifications
- -55°C to 150°C STORAGE temperature range
- 150°C operating junction temperature
- 10μA reverse current
- RF1001T2DNZ diode:
- 0.93V forward voltage @ IF=5A
- RF1601T2DNZ diode:
- 0.93V forward voltage @ IF=8A
- RF2001T2DNZ diode:
- 0.93V forward voltage @ IF=10A
- RF2001T3DNZ diode:
- 1.3V forward voltage @ IF=10A
- RF601T2DNZ diode:
- 0.93V forward voltage @ IF=3A
Applications
- General rectification
發佈日期: 2021-02-26
| 更新日期: 2022-03-11