ROHM Semiconductor RD3G08CBLHRB N-Channel Power MOSFET
ROHM Semiconductor RD3G08CBLHRB N-Channel Power MOSFET is a 40V, 80A, 100% Avalanche-tested semiconductor device with a low on-resistance. This power MOSFET features a ±160A pulse drain current, ±20V gate-source voltage, and 96W power dissipation. The RD3G08CBLHRB N-channel power MOSFET is AEC-Q101 qualified, RoHS-compliant, and comes in a TO-252 (DPAK) package. This power MOSFET operates within the -55°C to 175°C temperature range. Typical applications include Advanced Driver Assistance Systems (ADAS), infotainment, lighting, and body electronics.
Features
- Low on-resistance
- 100% Avalanche tested
- AEC-Q101 qualified
- Pd-free plating
- RoHS compliant
Specifications
- 40V drain-source voltage
- ±80A continuous drain current
- ±160A pulse drain current
- ±20V gate-source voltage
- 96W power dissipation
- TO-252 (DPAK) package
- -55°C to 175°C operating temperature range
Applications
- Advanced Driver Assistance Systems (ADAS)
- Infotainment
- Lighting
- Body electronics
Measurement Circuits
Dimensions
發佈日期: 2024-07-18
| 更新日期: 2024-08-01