RD3G08CBLHRBTL

ROHM Semiconductor
755-RD3G08CBLHRBTL
RD3G08CBLHRBTL

製造商:

說明:
MOSFET Nch 40V 80A, TO-252 (DPAK), Power MOSFET for Automotive

壽命週期:
新產品:
該製造商的新產品。
ECAD模型:
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庫存量: 2,490

庫存:
2,490 可立即送貨
工廠前置作業時間:
16 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$21.95 HK$21.95
HK$14.22 HK$142.20
HK$10.11 HK$1,011.00
HK$8.47 HK$4,235.00
HK$8.13 HK$8,130.00
完整捲(訂購多個2500)
HK$6.90 HK$17,250.00
HK$6.82 HK$34,100.00

商品屬性 屬性值 選擇屬性
ROHM Semiconductor
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
TO-252-3
N-Channel
1 Channel
40 V
80 A
3.2 mOhms
- 20 V, 20 V
4 V
42 nC
- 55 C
+ 175 C
96 W
Enhancement
Reel
Cut Tape
品牌: ROHM Semiconductor
配置: Single
下降時間: 14 ns
互導 - 最小值: 14 S
產品類型: MOSFETs
上升時間: 17 ns
原廠包裝數量: 2500
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 65 ns
標準開啟延遲時間: 32 ns
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所選屬性: 0

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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

RD3G08CBLHRB N-Channel Power MOSFET

ROHM Semiconductor RD3G08CBLHRB N-Channel Power MOSFET is a 40V, 80A, 100% Avalanche-tested semiconductor device with a low on-resistance. This power MOSFET features a ±160A pulse drain current, ±20V gate-source voltage, and 96W power dissipation. The RD3G08CBLHRB N-channel power MOSFET is AEC-Q101 qualified, RoHS-compliant, and comes in a TO-252 (DPAK) package. This power MOSFET operates within the -55°C to 175°C temperature range. Typical applications include Advanced Driver Assistance Systems (ADAS), infotainment, lighting, and body electronics.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.