新型RF JFET晶體管
CEL Low Noise FETs and ICs exhibit low noise figures and high associated gains, delivering exceptional noise figure performance at frequencies past 20GHz. These products are available in both ceramic and plastic packages that uphold the renowned Japanese manufacturing quality and reliability. The low-noise FETs and amplifier ICs offer better RF performance than other pHEMTs. Target markets for the devices include Digital Broadcast Systems (DBS), Low Noise Block (LNB) downconverters, and Very Small Aperture Terminal Satellite (VSAT) communication systems. Other typical applications include microwave communication systems, motion detectors, traffic monitoring, collision avoidance, and presence detections.
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CEL Low Noise FETs & ICsDeliver exceptional noise performance even beyond 20GHz with high associated gains.9/7/2023
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Qorvo QPD2160D 1600 µm離散GaAs pHEMT以P1dB、10.4dB增益提供32.5dBm輸出功率，並在1dB時提供63%的功率附加效率。19/4/2022 -
Qorvo QPD2120D 1200µm離散GaAs pHEMT以P1dB、11.5dB增益和1dB提供31dBm輸出功率。19/4/2022 -
Qorvo QPD2080D 800µm 離散GaAs pHEMT在1dB、11.5dB增益和1dB時提供29.5dBm輸出功率。19/4/2022 -
Qorvo QPD2060D 600µm離散GaAs pHEMT以P1dB、12dB增益提供28dBm輸出功率，1dB時可提供55%的功率附加效率。19/4/2022 -
Qorvo QPD2040D 400um Discrete GaAs pHEMT DieDesigned using Qorvo's proven standard 0.25um power pHEMT production process.14/2/2022 -
Qorvo QPD2018D 180um Discrete GaAs pHEMT DieUtilizes Qorvo's proven standard 0.25um power pHEMT production process.14/2/2022 -
Qorvo QPD2025D 250um Discrete GaAs pHEMT DieDeveloped using Qorvo's proven standard 0.25um power pHEMT production process.14/2/2022