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Qorvo TGF2965-SM GaN RF Input-Matched Transistor

Qorvo TGF2965-SM GaN RF Input-Matched Transistor is a 6W (P3dB), 50Ω-input matched discrete GaN (Gallium-Nitride) on SiC (Silicon Carbide) HEMT (High-Electron Mobility Transistor) which operates from 0.03GHz to 3.0GHz. The integrated input matching network enables wideband gain and power performance. The output can be matched on board to optimize power and efficiency for any region within the band.

The Qorvo TGF2965-SM GaN RF Input-Matched Transistor is housed in an industry-standard 3.0mm x 3.0mm surface-mount QFN package.

Applications

  • Military radar
  • Civilian radar
  • Land mobile and military radio communications
  • Test instrumentation
  • Wideband and narrowband amplifiers
  • Jammers

Features

  • 0.03 to 3.0GHz frequency range 
  • 6.0W output power (P3dB) at 2GHz
  • 18dB  linear gain at 2GHz
  • 63% typical PAE  at 2GHz
  • 32V drain voltage (VD)
  • 25mA drain quiescent current (IDQ)
  • Low thermal resistance package
  • CW and pPulse capable
  • 3.0mm x 3.0mm QFN16 package
  • Lead-free and ROHS compliant

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Block Diagram

Block Diagram - Qorvo TGF2965-SM GaN RF Input-Matched Transistor

Typical Application Circuit

Application Circuit Diagram - Qorvo TGF2965-SM GaN RF Input-Matched Transistor
發佈日期: 2015-03-02 | 更新日期: 2022-03-11