onsemi 1200V EliteSiC (Silicon Carbide) N-Channel MOSFETs

onsemi 1200V EliteSiC (Silicon Carbide) N-Channel MOSFETs are 1200V, 80mΩ MOSFETs that provide superior switching performance and high reliability. These MOSFETs offer low ON resistance and come in compact chip sizes, ensuring low capacitance and gate charge. The EliteSiC N-Channel MOSFETs feature high efficiency, fast operation frequency, high-speed switching, increased power density, reduced EMI, and reduced system size. These MOSFETs come in TO247-3L/TO247-3LD packages. The NVHL080N120SC1 and NVHL080N120SC1A MOSFETs are qualified for automotive according to AEC-Q101 grade certification.

Features

  • 1200V VDSS at T= +150°C
  • 80mΩ drain-to-source ON-resistance (RDS(on)) (typical)
  • High-speed switching with low capacitance
  • 100% UIL tested
  • Operating junction temperature ranges
    • -55°C to +150°C (for NTHL080N120SC1)
    • -55°C to +175°C (for NVHL080N120SC1 and NVHL080N120SC1A)
  • Pb-free and RoHS-compliant

Applications

  • NVHL080N120SC1
    • Automotive auxiliary motor drives
    • Automotive onboard chargers
    • Automotive DC/DC converters for Electric Vehicle (EV)/Hybrid Electric Vehicle (HEV)
  • NTHL080N120SC1
    • Industrial motor drives
    • UPS
    • Boost inverters
    • Photo-Voltaic (PV) chargers
  • NVHL080N120SC1A
    • Automotive onboard chargers
    • Automotive DC/DC converters for Electric Vehicle (EV)/Hybrid EV (HEV)

Videos

NxHL080N120SC1 Performance Graph

Performance Graph - onsemi 1200V EliteSiC (Silicon Carbide) N-Channel MOSFETs
發佈日期: 2019-03-03 | 更新日期: 2024-01-19