onsemi M1 EliteSiC MOSFETs
onsemi M1 EliteSiC MOSFETs feature voltage ratings of 1200V and 1700V. The onsemi M1 MOSFETs are designed to meet the requirements of high-power applications that demand reliability and efficiency. The M1 EliteSiC MOSFETs are available in various package options, including D2PAK7, TO-247-3LD, TO-247-4LD, and bare die.
Features
- 1200V and 1700V voltages
- D2PAK7, TO-247-3LD, TO-247-4LD, bare die packages
- +22V/-10V maximum gate-to-source voltage
- Low RDS(on) and high short circuit withstand time (SCWT)
- Balanced between switching losses and conduction losses
- Can be used to replace 1200V IGBTs
Related Products
onsemi 1200V SiC MOSFET
與矽裝置相比可提供出色的開關性能及更高的可靠性。
onsemi NTHL080N120SC1A N-Channel SiC MOSFET
Offers superior switching performance, high reliability, and low ON resistance.
onsemi NVBG020N120SC1 N-Channel Silicon Carbide MOSFETs
Use a technology that provides superior switching performance and higher reliability.
onsemi NVBG080N120SC1 1200V SiC MOSFET
Features high efficiency, fast operation frequency, increased power density, and reduced EMI.
onsemi NVBG160N120SC1 160mΩ SiC MOSFET
Offers 1200VDSS, 160mΩ maximum RDS(on), 19.5A maximum ID, and is AEC-Q101 qualified.
onsemi 1200V EliteSiC (Silicon Carbide) N-Channel MOSFETs
1200V, 80mΩ, high-speed switching, AEC-Q101 automotive qualified, and come in TO247-3L package.
onsemi NTBG028N170M1 1700V 碳化矽 (SiC) MOSFET
針對快速切換應用進行了最佳化。
Learn More About EliteSiC
發佈日期: 2023-04-04
| 更新日期: 2024-08-29