onsemi NTMYS010N04CL 40V Industrial Power MOSFET
onsemi NTMYS010N04CL 40V Industrial Power MOSFET features a small 5mm x 6mm footprint, low RDS(on), low Gate Charge (QG), and low capacitance. The low RDS(on) value helps to minimize conduction losses, while the low QG and low capacitance minimize driver losses. This single N-channel power MOSFET is Pb-free, RoHS-compliant, and features a wide, industrial-grade -55°C to +175°C operating temperature range.
Features
- Low RDS(on) to minimize conduction losses
- 10.3mΩ at 10V
- 17.6mΩ at 4.5V
- 38A maximum continuous drain (ID)
- 40V drain-to-source voltage (VDSS)
- ±20V gate-to-source voltage (VGS)
- 24A body diode source current (IS)
- Low 7.3nC total gate charge (QG(TOT))
- 570pF input capacitance (CISS)
- 230pF output capacitance (COSS)
- 18ns reverse recovery time (tRR)
- 9ns charge time (ta)
- 9ns discharge time (tD)
- -55°C to +175°C operating junction temperature (TJ)
- LFPAK4 package
- Pb-free and RoHS-compliant
Applications
- Switch mode power supplies
- Solar inverters
- Uninterruptible power supplies
- Induction heating equipment
- Motor drives
- Wind power converters
Internal Schematic
Package Dimensions
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發佈日期: 2019-08-27
| 更新日期: 2024-02-27