onsemi NTBL045N065SC1 33mohm Silicon Carbide MOSFET
onsemi NTBL045N065SC1 33mohm Silicon Carbide MOSFET is housed in a TOLL NTBL045N065SC1 package and designed to be fast and rugged. The devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.
Features
- Typ. RDS(on)= 33m @ VGS = 18V
- Typ. RDS(on)= 45m @ VGS = 15V
- Ultra Low Gate Charge (QG(tot) = 105nC)
- Low Effective Output Capacitance (Coss = 162pF)
- 100% Avalanche Tested
- TJ = 175°C
- RoHS Compliant
Applications
- SMPS (Switching Mode Power Supplies)
- Solar inverters
- UPS (Uninterruptable Power Supplies)
- Energy storage
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發佈日期: 2022-08-23
| 更新日期: 2024-06-19